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    VI SOT23 MARKING Search Results

    VI SOT23 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    VI SOT23 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L


    Original     		PDF OT23-6L OT23-6L DocID023012

    STT6N3LLH6

    Abstract: DIODE marking A2 stt6n3
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet — preliminary data Features Type RDS on VDSS STT6N3LLH6 30 V max 0.025 Ω (VGS= 10 V) 0.04 Ω (VGS= 4.5 V) ID 5 6 6A 3 2 1.6 W 1 SOT23-6L


    Original     		PDF OT23-6L OT23-6L STT6N3LLH6 DIODE marking A2 stt6n3

    Untitled

    Abstract: No abstract text available
    Text: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1


    Original     		PDF OT23-6L OT23-6L DocID024615

    Untitled

    Abstract: No abstract text available
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS on max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 STT6N3LLH6 5 6 30 V 3 2 1 0.036 Ω (VGS= 4.5 V)


    Original     		PDF OT23-6L OT23-6L DocID023012

    CHDTC114EKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTC114EKGP 100OC -40OC 50m100m CHDTC114EKGP

    CHDTA114YKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA114YKGP i-500 100OC -100m -500m -40OC -200m CHDTA114YKGP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA144EKPT -100m 100OC -500m -40OC -200m

    high gain PNP POWER TRANSISTOR "SOT23"

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA114YKPT 100OC -100m -500m -40OC -200m high gain PNP POWER TRANSISTOR "SOT23"

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC124EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .066 1.70 (3) (2) .055 (1.40) .047 (1.20) MARKING


    Original     		PDF CHDTC124EKPT 100OC -40OC 50m100m

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC143EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTC143EKPT 100OC -40OC 50m100m

    CHDTC114E

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC114EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTC114EKPT 100OC -40OC 50m100m CHDTC114E

    CHDTC124EKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC124EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .066 1.70 (3) (2) .055 (1.40) .047 (1.20) MARKING


    Original     		PDF CHDTC124EKGP 100OC -40OC 50m100m CHDTC124EKGP

    CHDTC143EKGP

    Abstract: a8j* npn transistor
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC143EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTC143EKGP 100OC -40OC 50m100m CHDTC143EKGP a8j* npn transistor

    CHDTA144EKTGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKTGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA144EKTGP Buil00 -100m 100OC -500m -40OC -200m CHDTA144EKTGP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA124EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA124EKPT -100m 100OC -500m -40OC -200m

    MARKING 103

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA114EKPT -100m 100OC -500m -40OC -200m MARKING 103

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKTPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA144EKTPT -100m 100OC -500m -40OC -200m

    CHDTA124EKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA124EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA124EKGP -100m 100OC -500m -40OC -200m CHDTA124EKGP

    CHDTA144EKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)


    Original     		PDF CHDTA144EKGP -100m 100OC -500m -40OC -200m CHDTA144EKGP

    MARKING WRS

    Abstract: Q62702-C2266 40VIE
    Text: PNP Silicon Digital Transistor BCR 198 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 47 kΩ, R2 = 47 kΩ 2 3 1 Type BCR 198 Marking WRs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2266


    Original     		PDF Q62702-C2266 OT-23 MARKING WRS Q62702-C2266 40VIE

    Q62702-C2261

    Abstract: No abstract text available
    Text: NPN Silicon Digital Transistor BCR 148 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 47 kΩ, R2 = 47 kΩ 2 3 1 Type BCR 148 Marking WEs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2261


    Original     		PDF Q62702-C2261 OT-23 Q62702-C2261

    Q62702-C2262

    Abstract: No abstract text available
    Text: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262


    Original     		PDF Q62702-C2262 OT-23 Q62702-C2262

    Untitled

    Abstract: No abstract text available
    Text: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5


    OCR Scan     		PDF 350mW Diodes/SOT23 DZ23-C2V7 DZ23-C3 DZ23-C3V3 DZ23-C3V6 DZ23-C3V9 DZ23-C4V3 DZ23-C4V7 DZ23-C5V1

    marking SH SOT23

    Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
    Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123


    OCR Scan     		PDF 0235bDS DO-35 OD-123 OT-23 marking SH SOT23 smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking