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    VHF POWER TRANSISTOR 50W Search Results

    VHF POWER TRANSISTOR 50W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    VHF POWER TRANSISTOR 50W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier PDF

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1 PDF

    RD70HVF

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF PDF

    RD70HVF

    Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz PDF

    RD70HVF1

    Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor PDF

    TSDF1205R

    Abstract: TSDF1205
    Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.


    Original     		TSDF1205/TSDF1205R TSDF1205 TSDF1205R D-74025 28-Oct-97 PDF

    TSDF1205RW

    Abstract: a3 sot 343 TSDF1205W
    Text: TSDF1205W/TSDF1205RW Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.


    Original     		TSDF1205W/TSDF1205RW TSDF1205W TSDF1205RW D-74025 28-Oct-97 a3 sot 343 PDF

    VHF Transceiver IC

    Abstract: SG971A vhf power transistor 50W
    Text: GAE GREAT AMERICAN ELECTROINCS SG971A Silicon NPN power VHF transistor SG971A is designed for wide band large signal output and driver amplifier stages of transceiver communication equipment in severe mismatch conditions. Output Power: Frequency Range: Voltage:


    OCR Scan     		SG971A SG971A OT-161 VHF Transceiver IC vhf power transistor 50W PDF

    VHF Transceiver IC

    Abstract: SG971 vhf power transistor 50W 17APC sg97 SG-97
    Text: GAE GREAT AMERICAN ELECTROINCS SG971 Silicon NPN power VHF transistor SG971 is designed for wide band large signal output and driver amplifier stages of transceiver communication equipment in severe mismatch conditions. Output Power: Frequency Range: Voltage:


    OCR Scan     		SG971 SG971 OT-119 VHF Transceiver IC vhf power transistor 50W 17APC sg97 SG-97 PDF

    2SC3147

    Abstract: TRANSISTOR 2SC3147
    Text: 2SC3147 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf m m • m m Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 50W Min. (f= 175MHz, V cc = 12.5V, ?C = 70%(Typ.) High Efficiency: 7c = 70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		2SC3147 175MHz, 2-13C1A 33pFX 961001EAA2' 2SC3147 TRANSISTOR 2SC3147 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)


    OCR Scan     		2SC3147 175MHz, 156pF 39pFX 132pF 33pFX PDF

    2SC3147

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 47 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm 1R4±Q5 Output Power High Efficiency : Po = 50W Min. (f= 175MHz, v e e = 1 2 .5 V , 7 c = 70%(Typ-) 7 c —70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		2SC3147 175MHz, 2-13C1A 156pF 39pFX 132pF 33pFX 2SC3147 PDF

    F627-8Q1

    Abstract: VTV-150 F627-8-Q1 VTV150 F-627-8-Q1 r215 Transistor 34-Q1
    Text: VTV150 15 Watts, 25 Volts VHF Television - Band III GENERAL DESCRIPTION CASE OUTLINE The VTV 150 is a COMMON EMITTER transistor capable of providing 15 Watts Peak Sync, Class A, RF Output Power over the band 175 - 225 MHz. It is designed for high efficiency, high linereity, Class A operation. Gold


    Original     		VTV150 2-20pF 25-240pF 1000pF F627-8Q1 F627-8Q1 VTV-150 F627-8-Q1 VTV150 F-627-8-Q1 r215 Transistor 34-Q1 PDF

    F627-8Q1

    Abstract: VTV075 VTV-075 F627-8-Q1
    Text: VTV075 7.5 Watts, 25 Volts, Class A VHF Television - Band III GENERAL DESCRIPTION CASE OUTLINE 55HV, STYLE 2 The VTV 075 is a COMMON EMITTER transistor capable of providing 7.5 Watts Peak Sync, Class A, RF Output Power over the band 175 - 225 MHz. It is designed for high efficiency, high linereity, Class A operation. Gold


    Original     		VTV075 2-20pF 25-240pF 1000pF F627-8Q1 F627-8Q1 VTV075 VTV-075 F627-8-Q1 PDF

    RD70HVF1

    Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 071J RF Transistor Selection 100OHM PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF PDF

    MAR 544 MOSFET TRANSISTOR

    Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically


    OCR Scan     		4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1327 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 136 MHz 28 VOLTS POUT = 50 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1327 is a 28V epitaxial silicon NPN planar transistor designed primarily for VHF communications. Gold metalization


    Original     		MS1327 MS1327 PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1327 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 136 MHz 28 VOLTS POUT = 50 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION


    Original     		MS1327 MS1327 PDF

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2021 Advanced Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		NPT2021 NPT2021 PDF