Untitled
Abstract: No abstract text available
Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance
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F9012
VGS12V
1110AvenidaAcaso,
72mOCH
D0D0273
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Untitled
Abstract: No abstract text available
Text: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL9110D,
FSL9110R
-100V,
36MeV/mg/cm2
1-800-4-HARRIS
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250JIS
Abstract: No abstract text available
Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
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FSF254D,
FSF254R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
250JIS
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Untitled
Abstract: No abstract text available
Text: a h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " " m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070H • Total Dose - • Single Event - • Dose Rate TO-254AA Meets Pre-Rad Specifications to 100kRAD(Si)
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FSF150D,
FSF150R
O-254AA
100kRAD
36MeV/mg/cm2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2021 PATENTED GOLD METALIZED General Description pp p a c k a g e : Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"* process features gold metal for greatly extended
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F2021
VGS12V
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