Untitled
Abstract: No abstract text available
Text: f r ^ y 7 S # G S - T H O M S O N S D 1 5 6 5 RF & MICROWAVE TRANSISTORS _ UHF PULSED APPLICATIONS • 500 WATTS @ 250jiSec PULSE WIDTH, 10% DUTY CYCLE ■ REFRACTORY GOLD METALLIZATION . EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND
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250jiSec
SD1565
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SCR350
Abstract: LT 428 BP107 T8K7-35 T8K7-350
Text: m N B ΠT8K7 350A X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 350 Amperes Average 4500 Volts T8K7 350A Phase Control SCR
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BP107,
020/I
9I/27
P-128
SCR350
LT 428
BP107
T8K7-35
T8K7-350
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2N9038
Abstract: 2N5039 2N503S 2N903 2N5038 JANTX 2N5039 2N5039 JANTX JANTX 2N5038
Text: JAN, JANTX, JANTXV 2N5038 JAN, JANTX, JANTXV 2N5039 POWER TRANSISTORS 20 Amp, 150V, Double Diffused NPN Mesa FEATU RES • • • • • DESCRIPTION These M IL approved double diffused glass passivated mesa power transistors com bine fast-switching, low saturation
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2N5038
2N5039
MIL-S-19500/439
2N9038
2N5039
2N503S
2N903
JANTX 2N5039
2N5039 JANTX
JANTX 2N5038
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TU 55x
Abstract: No abstract text available
Text: G 7. SGS'THOMSON SD1563 RiilO iS lilL§ TIM!ID©i RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ 1O^SEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250|iSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW
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SD1563
SD1563
DD70fci42
TU 55x
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Integrated cd 2025 cp
Abstract: Am2055 TLX2 siemens PABX ISDN IOM S-Bus interface echo ISDN echo cancellation SR1M-2
Text: Nov : I i99lj Preliminary a Advanced Micro Devices Am2080/Am2080B S-Bus Interface Circuit SBC DISTINCTIVE CHARACTERISTICS • Full duplex 2B + D SH’-interface transceiver according to CCITT 1.430 ■ Conversion of the frame structure between the S/T and IOM interfaces
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i99lj
Am2080/Am2080B
Integrated cd 2025 cp
Am2055
TLX2
siemens PABX
ISDN IOM S-Bus interface echo
ISDN echo cancellation
SR1M-2
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Untitled
Abstract: No abstract text available
Text: RFP25N05 HARRIS S E M I C O N D U C T O R 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET July 1998 Features Description • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses fea ture sizes approaching those of LSI integrated circuits, gives
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RFP25N05
RFP25N05
0-047S2
55e-10
1e-30
04e-3
04e-6)
85e-3
77e-5)
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Untitled
Abstract: No abstract text available
Text: HAFRFRIS RFP25N06, RF1S25N06, RF1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP25N06,
RF1S25N06,
RF1S25N06SM
55e-10
1e-30
04e-3
04e-6)
85e-3
77e-5)
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LTRG
Abstract: No abstract text available
Text: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and
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HYM5V64224A
64-bit
HY5V18164B
2048bit
HYM5V64224ARG/LRG/TRG/LTRG
Single24A
1EC07-10-JUN96
LTRG
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Untitled
Abstract: No abstract text available
Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9110D,
FSL9110R
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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ELE50
Abstract: ldxr
Text: STK1390 SlfTìTEK nvTIME 8K x 8 Nonvolatile Static RAM with Real Time Clock PRELIMINARY FEATURES DESCRIPTION • Solid-state nonvolatile SRAM/RTC solution no batteries required • Ideal for metering applications • 25,30,35 and 45 ns SRAM read/write access
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STK1390
768kHz
32-pin
STK1390
12-hr
24-hr
00-3B
01-0C
81-8C
ELE50
ldxr
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S0151
Abstract: No abstract text available
Text: am im m R F P ro du cts M ic m s e m m 140 Commerce Drive Montgomeryviile. PA 18936-1013 Tel: {215 631-9840 i pfO§f8£s> S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W T Y P IC A L C W 15W TYPICAL PULSED GOLD METALLIZATION m
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SD1511-8
s45/e
S0151
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Untitled
Abstract: No abstract text available
Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFD16N03L,
RFD16N03LSM
96e-9
1e-30
95e-4
92e-3
29e-5)
03e-3
45e-5)
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Untitled
Abstract: No abstract text available
Text: SFS9540 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = -100V
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SFS9540
-100V
T0-220F
71b4142
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY b3E D • QES7TOT DDD112G 637 MAVP A dvanced pow er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50fl POWER MOS IV' N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT806R5KN UNIT 800
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DDD112G
APT806R5KN
O-22QAC
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Untitled
Abstract: No abstract text available
Text: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
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RFP25N06,
RF1S25N06,
RF1S25N06SM
1e-30
04e-3
04e-6)
85e-3
77e-5)
35e-3
77e-6)
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VOLTAGE LEVEL RELAY SM 125 230
Abstract: No abstract text available
Text: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ9160D,
FSJ9160R
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
VOLTAGE LEVEL RELAY SM 125 230
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Untitled
Abstract: No abstract text available
Text: FSL110D, FSL110R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june1997 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O S F E T s specifically designed for commercial and military space
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FSL110D,
FSL110R
june1997
1-800-4-HARRIS
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SFR 252 diode
Abstract: p-channel 250V power mosfet
Text: SFR/U9224 A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A {M a x. @ VDS = -250V
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-250V
SFR/U9224
SFR 252 diode
p-channel 250V power mosfet
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BUK102-50GL
Abstract: T0220AB
Text: N AUER PHILIPS/DISCRETE b'lE » • bbSB'lBl 003036T TSE ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monofithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general
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003Q36T
BUK102-50GL
bbS3131
ID/100
T0220AB
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of lcd based electronic voting machine by using 8051
Abstract: fcb61c65-70 80C52 signetics dotting word philips Power MOSFET Selection Guide of lcd based electronic voting machine by using 8051 microcontroller TCXO 10MHZ low g sensitivity TDD1742 8051 based traffic light controller an electronic voting machine using 8051
Text: Philips Components-Signetics Cellular chip set design guide RF C om m unications The Philips C om ponents-S ignetics C ellular chip set is the w orld’s first com plete chip set com m ercially available from one manufacturer. It com bines both B ipolar and CMOS
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TIL51
v24lnt
of lcd based electronic voting machine by using 8051
fcb61c65-70
80C52 signetics
dotting word
philips Power MOSFET Selection Guide
of lcd based electronic voting machine by using 8051 microcontroller
TCXO 10MHZ low g sensitivity
TDD1742
8051 based traffic light controller
an electronic voting machine using 8051
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DC-101
Abstract: No abstract text available
Text: DDC101 Or, Call Customer Service at 1-800-548-6132 USA Only APPLICATIONS • DIRECT PHOTOSENSOR DIGITIZATION • DIGITAL FILTER NOISE REDUCTION: 0.9ppm, rms • PRECISION INSTRUMENTATION • DIGITAL ERROR CORRECTION: CDS • PRECISION PROCESS CONTROL • CONVERSION RATE: Up to 15kHz
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DDC101
15kHz
DDC101
20-bit
17313b5
101P-C
17313b5
DC-101
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Untitled
Abstract: No abstract text available
Text: HUF75309T3ST S em iconductor November 1998 Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.2 Features 3A,55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF75309T3ST
portab-90.
OT-223
EIA-481
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Untitled
Abstract: No abstract text available
Text: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG20N60C3,
HGTP20N60C3,
HGT1S20N60C3,
HGT1S20N60C3S
108ns
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4558 opamp
Abstract: byb 501 SSC 9500 ic 4558 pin diagram Integrated cd 2025 cp 741 opamp CCITT1430 am2110 nt 407 f dallas 1822
Text: Nov : I i99lj Preliminary a Advanced Micro Devices Am2080/Am2080B S-Bus Interface Circuit SBC DISTINCTIVE CHARACTERISTICS • Full duplex 2B + D SH’-interface transceiver according to CCITT 1.430 ■ Conversion of the frame structure between the S/T and IOM interfaces
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i99lj
Am2080/Am2080B
4558 opamp
byb 501
SSC 9500
ic 4558 pin diagram
Integrated cd 2025 cp
741 opamp
CCITT1430
am2110
nt 407 f
dallas 1822
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