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    VGS MOSFET Search Results

    VGS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    VGS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1551DL-T1

    Abstract: Si1551DL
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


    Original     		PDF Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


    Original     		PDF Si1551DL OT-363 SC-70 Si1551DL-T1 S-42353â 20-Dec-04

    Si5517DU

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


    Original     		PDF Si5517DU 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


    Original     		PDF Si5517DU 51930--Rev. 12-Sep-05

    Si1551DL

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = -4.5 V -0.44 1.600 @ VGS = -2.7 V -0.34 1.800 @ VGS = -2.5 V -0.32


    Original     		PDF Si1551DL OT-363 SC-70 S-21374--Rev. 12-Aug-02

    Si1551DL

    Abstract: Si1551DL-T1
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


    Original     		PDF Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


    Original     		PDF Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 S-42353--Rev. 20-Dec-42

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


    Original     		PDF Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Si4539DY

    Abstract: Si6543DQ Si9939DY 51308
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


    Original     		PDF Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 51308

    Si9928DY

    Abstract: 701.43
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY S-00652--Rev. 27-Mar-00 701.43

    Si9939DY

    Abstract: No abstract text available
    Text: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V


    Original     		PDF Si9939DY S-42910--Rev.

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


    Original     		PDF Si9939DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96

    Si9928DY

    Abstract: Si6552DQ Si9529DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Si4532DY

    Abstract: Si4539DY Si6543DQ Si9958DY si9958
    Text: Si9958DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary VDS (V) N-Channel ID (A) 0.10 @ VGS = 10 V "3.5 0.12 @ VGS = 6 V "3 0.15 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.19 @ VGS = –4.5 V "2.5 20 P-Channel rDS(on) (W)


    Original     		PDF Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 si9958

    Si4532DY

    Abstract: Si4539DY Si6543DQ Si9958DY
    Text: Si9958DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary VDS (V) N-Channel ID (A) 0.10 @ VGS = 10 V "3.5 0.12 @ VGS = 6 V "3 0.15 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.19 @ VGS = –4.5 V "2.5 20 P-Channel rDS(on) (W)


    Original     		PDF Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5517DU

    Abstract: Si5517DU-T1-GE3 si5517
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 18-Jul-08 Si5517DU-T1-GE3 si5517

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI5517DU

    Abstract: SI5517
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5517

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V


    Original     		PDF Si9928DY S-42910--Rev.