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    VG37648041AT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VG37648041AT Powerchip CMOS Synchronous Dynamic RAM Original PDF
    VG37648041AT Vanguard International Semiconductor 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM Original PDF

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    DYNAMIC RAM CROSS REFERENCE

    Abstract: VG37648041AT
    Text: VIS Preliminary VG37648041AT 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM Description The 256Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write


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    PDF VG37648041AT 256Mb 1G5-0157 DYNAMIC RAM CROSS REFERENCE VG37648041AT