VG36643241AT Search Results

VG36643241AT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
VG36643241AT-5		Vanguard International Semiconductor	Vanguard International Semiconductor Corporation (VIS)		Original	PDF
VG36643241AT-7		Vanguard International Semiconductor	Vanguard International Semiconductor Corporation (VIS)		Original	PDF

VG36643241AT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
dynamic ram binary cell Abstract: QBA-1 qab1 Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only	Original	PDF	VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1

Catalog Datasheet

MFG & Type

PDF

Document Tags

dynamic ram binary cell

Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Original

PDF

VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1