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    VERY HIGH TRANSCONDUCTANCE Search Results

    VERY HIGH TRANSCONDUCTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    VERY HIGH TRANSCONDUCTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GY50NC60WD

    Abstract: No abstract text available
    Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■


    Original     		PDF STGY50NC60WD Max247 GY50NC60WD Max247

    Untitled

    Abstract: No abstract text available
    Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ Very high frequency inverters, UPS


    Original     		PDF STGY50NC60WD Max247 GY50NC60WD

    GY50NC60WD

    Abstract: STGY50NC60WD
    Text: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■


    Original     		PDF STGY50NC60WD Max247 GY50NC60WD GY50NC60WD STGY50NC60WD

    STGW30NC60VD

    Abstract: GW30NC60VD
    Text: STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency inverters, UPS ■ Motor drive


    Original     		PDF STGW30NC60VD O-247 GW30NC60VD STGW30NC60VD GW30NC60VD

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency inverters, UPS ■ Motor drive


    Original     		PDF STGW30NC60VD O-247 GW30NC60VD

    GE50NC60VD

    Abstract: STGE50NC60VD schematic inverter STGE50NC60VD
    Text: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters


    Original     		PDF STGE50NC60VD GE50NC60VD STGE50NC60VD schematic inverter STGE50NC60VD

    Untitled

    Abstract: No abstract text available
    Text: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters


    Original     		PDF STGE50NC60VD

    cfy siemens

    Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
    Text: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters


    Original     		PDF CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 cfy siemens CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K

    schematic diagram UPS inverter

    Abstract: STGW50HF65SD IGBT 15A TO-3P
    Text: STGW50HF65SD STGWT50HF65SD 60 A, 650 V, very low drop IGBT with soft and fast recovery diode Datasheet - preliminary data Features • Very low on-state voltage drop  Low switching off  High current capability 2  Very soft Ultrafast recovery antiparallel diode


    Original     		PDF STGW50HF65SD STGWT50HF65SD O-247 STGWT50HF65SD DocID024411 schematic diagram UPS inverter IGBT 15A TO-3P

    A High Linearity Darlington Intermediate Frequency (IF) Amplifier for Wide Bandwidth Applications

    Abstract: DARLINGTON RF
    Text: A High Linearity Darlington Intermediate Frequency IF Amplifier for Wide Bandwidth Applications This article describes the design of a very high linearity, wideband intermediate frequency (IF) amplifier. The design has a very flat gain response and most of the circuit


    Original     		PDF

    STGBL6NC60D

    Abstract: STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D GPL6NC60D
    Text: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D 600 V - 6 A hyper fast IGBT Features • Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode 3 1 ■ Very high frequency operation ■ High frequency lamp ballast


    Original     		PDF STGBL6NC60D STGDL6NC60D STGFL6NC60D STGPL6NC60D O-220FP O-220 STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGPL6NC60D GFL6NC60D GPL6NC60D

    GPL6NC60D

    Abstract: GBL6NC60D GFL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D
    Text: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D 600 V - 6 A hyper fast IGBT Features • Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode 3 1 ■ Very high frequency operation ■ High frequency lamp ballast


    Original     		PDF STGBL6NC60D STGDL6NC60D STGFL6NC60D STGPL6NC60D O-220FP O-220 GPL6NC60D GBL6NC60D GFL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGPL6NC60D

    GW50HF60SD

    Abstract: ST IGBT code marking STGW50HF60SD FIGURE15
    Text: STGW50HF60SD 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features • Very low on-state voltage drop ■ Low switching off ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Application ■ PV inverter ■


    Original     		PDF STGW50HF60SD O-247 STGW50HF60SD GW50HF60SD O-247 ST IGBT code marking FIGURE15

    CA5470

    Abstract: CA5470E CA5470M CA5470M96
    Text: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation


    Original     		PDF CA5470 14MHz, CA5470 CA5470E CA5470M CA5470M96

    Untitled

    Abstract: No abstract text available
    Text: STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB • High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode 1 Applications ■ Home appliance ■ Lighting 3 3 1 2 TO-220FP


    Original     		PDF STGB3NC120HD STGF3NC120HD, STGP3NC120HD O-220FP O-220 STGB3NC120HDT4 GB3NC120HD

    gw20nc60vd

    Abstract: STGW20NC60VD ST IGBT code marking 575 L 80 9983 schematic diagram UPS gw20nc60v
    Text: STGW20NC60VD 30 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off


    Original     		PDF STGW20NC60VD O-247 GW20NC60VD gw20nc60vd STGW20NC60VD ST IGBT code marking 575 L 80 9983 schematic diagram UPS gw20nc60v

    GW30NC60VD

    Abstract: STGW30NC60VD schematic diagram UPS schematic diagram UPS 600 Power free schematic diagram UPS inverter
    Text: STGW30NC60VD 40 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off


    Original     		PDF STGW30NC60VD O-247 GW30NC60VD GW30NC60VD STGW30NC60VD schematic diagram UPS schematic diagram UPS 600 Power free schematic diagram UPS inverter

    UC3843 application note soft start

    Abstract: 24v dc power supply with uc3842 uc3843 12v to 24v uc3844 schematic diagram 24v dc dc uc3842 dc/dc converter 24v application circuits uc3843 step down uc3843 step up UC3842 smps design UC3843 step up converter uc3843 flyback supply
    Text: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


    Original     		PDF L296P L296P) L296P UC3843 application note soft start 24v dc power supply with uc3842 uc3843 12v to 24v uc3844 schematic diagram 24v dc dc uc3842 dc/dc converter 24v application circuits uc3843 step down uc3843 step up UC3842 smps design UC3843 step up converter uc3843 flyback supply

    GW20NC60

    Abstract: STGW20NC60VD
    Text: STGW20NC60VD 30 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off


    Original     		PDF STGW20NC60VD O-247 GW20NC60VD GW20NC60 STGW20NC60VD

    mosfet 1500v

    Abstract: L7 diode STFV4N150 STMicroelectronics DIODE marking code FV4N150 JESD97 Vdss 1500V
    Text: STFV4N150 N-channel 1500V - 5Ω - 4A TO-220FH Very high voltage PowerMESH MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <0.7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching


    Original     		PDF STFV4N150 O-220FH O-220 mosfet 1500v L7 diode STFV4N150 STMicroelectronics DIODE marking code FV4N150 JESD97 Vdss 1500V

    Untitled

    Abstract: No abstract text available
    Text: LS5301 •PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL J-FET LINEAR SYSTEMS Linear Integrated Systems ¡FEATURES Plastic HIGH GAIN 3 ^ = 0.040 nm ho TYPICAL VERY HIGH INPUT IMPEDANCE L = 0.100 pA TYPICAL LOW POWER Vnc, m= 0.8 V TYPICAL _GS O IT _


    OCR Scan     		PDF LS5301 PF5301 300mW 100Hz LISIS00073

    Untitled

    Abstract: No abstract text available
    Text: / S 7 S GS-THOM SON ^7 # » M g(M [I[L[I(g¥[M)Rl(gS STVHD90 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS STVHD90 50 V • • • • • • ^DS(on) fi 0.023 •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT


    OCR Scan     		PDF STVHD90

    STVHD90

    Abstract: No abstract text available
    Text: Æ 7 SGS-THOMSON STVHD90 7 Æ „ HO g (S [iL[i(g¥®(ô)iQ(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA • • • • • • TYPE Voss R DS(on) STVHD90 50 V 0.023 fi •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT


    OCR Scan     		PDF STVHD90 STVHD90

    Untitled

    Abstract: No abstract text available
    Text: LS5301. PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL J-FET LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN Plastic = 0.040 timho TYPICAL Z' O d \ O *H V p/ VERY HIGH INPUT IMPEDANCE lQ= 0.100 pA TYPICAL g LOW POWER VQS(om= 0.8 V TYPICAL ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF LS5301. PF5301 300mW 100Hz