MOSFET SOT-23 marking 122
Abstract: No abstract text available
Text: GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS th TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source
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GF2301
O-236AB
OT-23)
VDS-20V
OT-23
MOSFET SOT-23 marking 122
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mosfet low vgs
Abstract: No abstract text available
Text: GF2301 P-Channel Enhancement-Mode MOSFET Low VGS th VDS-20V RDS(ON) 0.13Ω ID -2.3A TO-236AB (SOT-23) H C N ct E ET u R d T NF ro P GE New .122 (3.1) .110 (2.8) TM .016 (0.4) Top View .037(0.95) .037(0.95) .016 (0.4) .007 (0.175) .005 (0.125) 2 max. .004 (0.1)
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GF2301
VDS-20V
O-236AB
OT-23)
OT-23
mosfet low vgs
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GF2301
Abstract: No abstract text available
Text: GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS th TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source
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GF2301
O-236AB
OT-23)
VDS-20V
OT-23
GF2301
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 JULY 1994_ FEATURES * 60 V o lt VDS * R e p e titive ava la n che ra tin g R DS on = * N o tra n s ie n t p ro te c tio n re q u ire d * C h a racterised fo r 5V lo g ic d riv e APPLICATIONS
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P-channel Trench MOSFET
Abstract: No abstract text available
Text: < X >G e n e r a l v S e m ic o n d u c t o r _ GF2301 P-Channel Enhancement-Mode MOSFET # % LowVGS<th VDS-20V RdS(ON)0.13Q Id-2.3A TO-236AB (SOT-23) 0.031 (0.8) Hh Top View -F p - Pin Configuration 0 .0 3 5 (0.9) 0.079 (2.0) 1. Gate 2. Source
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GF2301
O-236AB
OT-23)
VDS-20V
OT-23
OT-23,
P-channel Trench MOSFET
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lta 601
Abstract: No abstract text available
Text: FIELD E F F E C T T R A N S IS T O R 2SK1359 SILICON N C H A N N E L MOS T Y P E tt-M O S i i -5 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U n it 15.9MAX. • Low D ra in -S o u rc e ON R e s is ta n c e : • H ig h Forward T r a n s f e r A d m itta n c e :
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2SK1359
VDS-20V,
lta 601
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2SK2039
Abstract: SC-65
Text: +441276694800 TOSHIBP ELECTRONICS SEMICONDUCTOR T O SH IBA TECHNICAL 332 P 02 0 1 . 0 2 .0 0 1 0 :5 8 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2039 SILICON N CHANNEL MOS TYPE DATA tt- M O S I I . S r' t.'" i i ; ! INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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2SK2039
2sk2039
SC-65
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