k1359
Abstract: K135 2SK1359
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
k1359
K135
2SK1359
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K1359
Abstract: 2SK1359
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
K1359
2SK1359
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k1359
Abstract: K135 2SK1359 SC-65
Text: 2SK1359 東芝電界効果トランジスタ .5 シリコンNチャネルMOS形 π−MOSⅡ 2SK1359 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.0Ω (標準) z 順方向伝達アドミタンスが高い。
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2SK1359
SC-65
2-16C1B
VDD400
K1359
k1359
K135
2SK1359
SC-65
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2SK135
Abstract: No abstract text available
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
2SK135
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Untitled
Abstract: No abstract text available
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
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K1359
Abstract: 2sk1359
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
2-16C1B
K1359
2sk1359
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k1359
Abstract: 2SK1359 K135
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
k1359
2SK1359
K135
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Untitled
Abstract: No abstract text available
Text: 2SK1359 TOSHIBA Field Effect Transistor .5 Silicon N Channel MOS Type −MOSII 2SK1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Unit: mm
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2SK1359
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Untitled
Abstract: No abstract text available
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
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K1359
Abstract: 2SK1359 VDSS1000V
Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1359
K1359
2SK1359
VDSS1000V
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)
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2SK1359
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2SK1359
Abstract: No abstract text available
Text: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.)
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2SK1359
2SK1359
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S I I 5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS U n i t in m m • Low Drain-Source ON Resistance
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2SK1359
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lta 601
Abstract: No abstract text available
Text: FIELD E F F E C T T R A N S IS T O R 2SK1359 SILICON N C H A N N E L MOS T Y P E tt-M O S i i -5 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U n it 15.9MAX. • Low D ra in -S o u rc e ON R e s is ta n c e : • H ig h Forward T r a n s f e r A d m itta n c e :
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2SK1359
VDS-20V,
lta 601
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Tr-MOSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS U nit in mm • Low Drain-Source ON Resistance
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2SK1359
Temperat1359
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S II-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance
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2SK1359
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K1359
Abstract: toshiba l40 2SK1359
Text: T O S H IB A 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance
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2SK1359
K1359
toshiba l40
2SK1359
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transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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2sj239
Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]
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2SK1112
2SK1719
2SJ239
2SK2030
2SK1079
TE12L)
2SK1078
2SJ238
2sj239
TE12L
2SK1118
2SJ239LB
2SK1717
k1119
2SK1380
2SK945
2SK1913
T0220FL
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