Untitled
Abstract: No abstract text available
Text: IDEAS FOR DESIGN Page Power/battery switching using VDMOS-FETs 58 Drivers for brushless DC motors 60 Siren driver circuit for car alarm 61 Printed circuit-board heatsink area for surface mount packages 62 JFET constant current sources 63 JFET source followers and amplifiers
|
OCR Scan
|
|
PDF
|
PHC21025
Abstract: No abstract text available
Text: Philips Semiconductors Ideas for design Small-signal Field-effect Transistors POWER/BATTERY SWITCHING USING VD-MOS-FETS A Power switch can be used to disconnect a load during a period of non use. The load may be anything from a light bulb, an electronic valve, a stepper or brush motor to
|
OCR Scan
|
|
PDF
|
9n60 mosfet
Abstract: 9n60
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX9N90 900V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX9N90
Tel086-28-85198496
Fax086-28-8519893
RX9N90]
RX9N90,
00A/us,
9n60 mosfet
9n60
|
PDF
|
NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
|
Original
|
transisto25-735.
NTC 220-11
PHILIPS TRANSMITTING BIPOLAR
Philips Semiconductors Small-signal Transistors Selection guide
|
PDF
|
RX12N60
Abstract: 12N60
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX12N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX12N60
Tel086-28-85198496
Fax086-28-8519893
RX12N60]
12N60
RX12N60,
O-220AB,
RX12N60
|
PDF
|
8N60
Abstract: RX8N60
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX8N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX8N60
Tel086-28-85198496
Fax086-28-8519893
RX8N60]
RX8N60,
O-220AB,
00A/us,
8N60
RX8N60
|
PDF
|
POWER BJTs
Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor
|
Original
|
AN1540/D
AN1540
AN1540/D*
POWER BJTs
AN1540
IXYS SCR Gate Drive
vertical pnp bjt
failure analysis IGBT
Drive Base BJT
Nippon capacitors
IGBT tail time
|
PDF
|
transistor 6n60
Abstract: RX6N60 power mosfet 6n60
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX6N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX6N60
Tel086-28-85198496
Fax086-28-8519893
RX6N60]
RX6N60,
O-220AB,
00A/us,
transistor 6n60
RX6N60
power mosfet 6n60
|
PDF
|
5N60
Abstract: No abstract text available
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX5N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX5N60
Tel086-28-85198496
Fax086-28-8519893
RX5N60]
RX5N60,
O-220AB,
00A/us,
5N60
|
PDF
|
Philips high frequency bipolar transistor with Ft
Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
|
Original
|
MGM011
BLV861
BLV2045
Philips high frequency bipolar transistor with Ft
equivalent transistor bc 107
modern transistor substitute
RF Bipolar Transistor
bc 107 TRANSISTOR equivalent
BIPOLAR TRANSISTOR
VDMOS DEVICE
NPN planar RF transistor
Philips high frequency bipolar transistor
bipolar transistor die layout
|
PDF
|
via vn800
Abstract: PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340
Text: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete
|
Original
|
AN1351
via vn800
PS-2403D
F-120-9A
VN800
VDMOSFET
2403D
AN1351
IEC801-6
L6376
VN340
|
PDF
|
Hard Disk drive spindle motor control inductive sense
Abstract: design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller PHN405
Text: IDEAS FOR DESIGN Page Power/battery switching using VD-MOS FETs 2 Drivers for brushless DC motors 4 Using the PHN708 and PHN405 in hard disk drives 6 Siren driver circuit for car alarms 9 Printed circuit board heatsink area for surface-mount packages 10 Philips Semiconductors
|
Original
|
PHN708
PHN405
MBB446
OT223
Hard Disk drive spindle motor control inductive sense
design ideas
hard drive spindle motors diagram
Philips stepper motor
PHC21025
EIGHT MOSFET ARRAY
Silicon P-Channel Junction FET sot23
Dual N FET
spindle and VCM motor controller
|
PDF
|
transistor 7n60
Abstract: No abstract text available
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX7N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX7N60
Tel086-28-85198496
Fax086-28-8519893
RX7N60]
RX7N60,
O-220AB,
00A/us,
transistor 7n60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX15N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
|
Original
|
RX15N60
Tel086-28-85198496
Fax086-28-8519893
RX15N60]
15N60
RX12N60,
|
PDF
|
|
|
via vn800
Abstract: 2403d keytek VDMOSFET VN340 L6376 AN358 design rules AN1351 VN800 IEC61000-4-4
Text: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete
|
Original
|
AN1351
via vn800
2403d
keytek
VDMOSFET
VN340
L6376
AN358 design rules
AN1351
VN800
IEC61000-4-4
|
PDF
|