electronic watchdog application using NE555 IC
Abstract: PWM dip8 MARKING 099 DFN8 AN-1603 flash memory 3.3 V military AN1039 1F39H 7FLITEUS
Text: ST7LITEUSx 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS PRELIMINARY DATA • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:
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MED427-A1
Abstract: MED427A-1 LX1801 igbt 0201 a LX1802 MSAGA11F120D VDD800 MD427 IGBT microsemi HALF CONTROLLER BRIDGE notes
Text: MED427-A1 INTEGRATED PRODUCTS MicroPower High Voltage Half Bridge DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current
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MED427-A1
Sn63/Pb37
250nA
MED427-A1
MED427A-1
LX1801
igbt 0201 a
LX1802
MSAGA11F120D
VDD800
MD427
IGBT microsemi
HALF CONTROLLER BRIDGE notes
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Untitled
Abstract: No abstract text available
Text: MED427 High Voltage Half Bridge CARLSBAD DIVISION TARGET DATASHEET KEY FEATURES ! ! ! ! ! ! ! IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½
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MED427
MED427
LX1801
LX1802
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JRC 2100 8 pin
Abstract: JRC 2100 bs 1600 pir sensor Pinout Diagram for IC ne555 electronic watchdog application using NE555 IC 16 PIN PIR SENSOR IC PINOUT ST7DALI-EVAL kit NE555 applications and pins configurations DIP8-300 Datasheet of ic ne555
Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C
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ST7FLiteUS5
Abstract: HE10 AN1324
Text: ST7LITEUSx 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS PRELIMINARY DATA • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:
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CHIP 8-PIN 2100 JRC
Abstract: ST7LITEU05 U435 MOROCCO AN2326 HE10 ST7LITEU09 BCP91 st7fliteu09 frc20
Text: ST7LITEU05 ST7LITEU09 8-bit MCU with single voltage Flash memory, ADC, timers Features • Memories – 2K Bytes single voltage Flash program memory with readout protection, in-circuit and in-application programming ICP and IAP . 10K write/erase cycles guaranteed,
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ST7LITEU05
ST7LITEU09
CHIP 8-PIN 2100 JRC
ST7LITEU05
U435 MOROCCO
AN2326
HE10
ST7LITEU09
BCP91
st7fliteu09
frc20
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MED427A-1
Abstract: No abstract text available
Text: MED427-A1 High Voltage Half Bridge CARLSBAD DIVISION DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current
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MED427-A1
MED427-A1
LX1801
LX1802
MED427A-1
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25C80
Abstract: JRC 2100 8 pin ST7FLiteUS5 DALI BASIC SO U435 MOROCCO AN2326 HE10 JRc 1431 A STX-RLINK pin out 02800E
Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C
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DIP16
25C80
JRC 2100 8 pin
ST7FLiteUS5
DALI BASIC SO
U435 MOROCCO
AN2326
HE10
JRc 1431 A
STX-RLINK pin out
02800E
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Untitled
Abstract: No abstract text available
Text: ST7LITEU05 ST7LITEU09 8-bit MCU with single voltage Flash memory, ADC, timers Features Memories – 2K Bytes single voltage Flash program memory with readout protection, in-circuit and in-application programming ICP and IAP . 10K write/erase cycles guaranteed,
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ST7LITEU05
ST7LITEU09
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"Angle Sensor"
Abstract: "Rotary Sensor" Rotary Sensor 360 hall circuit transistor bosch signal hall sensor bosch TPS bosch angle sensor D-82054 Bosch Rotary Sensor 360 Angle Sensor"
Text: Bourns Sensors GmbH Preliminary Spec: Non-contact Angle Sensor 1. Introduction 1.2 Electrical Specifications The non-contacting rotary sensor is based on a two-axis Hall sensor element. The rotor is connected to a magnet that is mounted above the sensor ASIC-chip. Its angular position is
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D-82054
"Angle Sensor"
"Rotary Sensor"
Rotary Sensor 360 hall circuit transistor bosch
signal hall sensor bosch
TPS bosch
angle sensor
Bosch
Rotary Sensor 360
Angle Sensor"
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ST7FLiteUS5
Abstract: AN2326 marking 099 dfn8 ana 650 DIP 8 U435 MOROCCO HE10 electronic watchdog application using NE555 IC NE555 pulse generator JEDEC TRAY DFN8 lt 0210
Text: ST7LITEUSx 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:
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st7fliteu09
Abstract: CHIP 8-PIN 2100 JRC ST7LITEU09 AN1900 ST7FLITEU09B6 ST7LITEU05 1136 jrc AN1603 U435 MOROCCO 8421 readout tube
Text: ST7LITEU05 ST7LITEU09 8-bit MCU with single voltage Flash memory, ADC, timers PRELIMINARY DATA Features • ■ ■ ■ Memories – 2K Bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K
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ST7LITEU05
ST7LITEU09
st7fliteu09
CHIP 8-PIN 2100 JRC
ST7LITEU09
AN1900
ST7FLITEU09B6
ST7LITEU05
1136 jrc
AN1603
U435 MOROCCO
8421 readout tube
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jrc 741
Abstract: SMARTCARD IC dali protocol PWM dip8 ic 7421 620 TG On Semi
Text: ST7LITEUSx 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:
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