NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
S29NS256/128/64N
NS064N
S29NS128N
S29NS256N
VDC048
S29NS256
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VDC048
Abstract: No abstract text available
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 29, 2008 Obsolescence Notification No: Subject: 2708 Obsolescence of the Discrete S29NS128J Products Spansion LLC is announcing the obsolescene of the 110nm, 1.8V Burst Mode Floating Gate NOR
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S29NS128J
110nm,
S29NS128J0LBFW000
S29NS128J0LBJW000
S29NS128J0PBFE000
S29NS128J0LBFW003
S29NS128J0LBJW003
S29NS128J0PBJW000
VDC048
VDC048
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ns032j0lbjw00
Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
ns032j0lbjw00
B6 3308
S29NS032J
VDC048
VDE044
LF35
Am29N643
NS064J0LBJW00
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Untitled
Abstract: No abstract text available
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
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NS256N
Abstract: S29NS-N S29NS-P VDC048 VDE044 128M256 NS128N
Text: S29NS-N to S29NS-P Migration Migrating from the NS-N 110 nm to the NS-P (90 nm) Application Note Introduction Every effort was made to ensure seamless migration from the S29NS-N to the S29NS-P. Software Migration Considerations There are very few changes required in SW when migrating from the S29NS-N to S29NS-P
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S29NS-N
S29NS-P
S29NS-P.
S29NS-P
NS256N
VDC048
VDE044
128M256
NS128N
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Am29N643
Abstract: ns064j0lb 5M-199 s29ns032 s99d
Text: S29NS128J/S29NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics
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S29NS128J/S29NS064J/S29NS032J/
S29NS016J
16-Bit)
S29NS016J/S29NS032J/S29NS064J/S29NS128J
Am29N643
ns064j0lb
5M-199
s29ns032
s99d
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LF35
Abstract: S29NS032J S29NS-J VDC048 VDE044 NS064J0LBJW00 Nokia c7 AMAX-16 NS032J0PBJW00 Am29N643
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories Data Sheet Notice to Readers: This document states the current technical specifications
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S29NS-J
16-Bit)
S29NS-J
LF35
S29NS032J
VDC048
VDE044
NS064J0LBJW00
Nokia c7
AMAX-16
NS032J0PBJW00
Am29N643
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bjw marking code
Abstract: S29NS128N S29NS256N S29NS-N VDC048 VDE044 spansion am29f part marking
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
bjw marking code
S29NS128N
S29NS256N
VDC048
VDE044
spansion am29f part marking
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S29NS128N
Abstract: S29NS256N S29NS-N VDC048 VDE044 bjw marking code
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
S29NS128N
S29NS256N
VDC048
VDE044
bjw marking code
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S32HMD24926BAEA20
Abstract: V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA August 19, 2010 Advanced Change Notification No: Subject: 2806 Obsolescence of the products listed below Product Identification: 1201-2648.1 43470D3 43470G6 4347255 4347289
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43470D3
43470G6
5103535B84
5185941F60
5199213K04
AM29LV640GU53RPCI
DIG-00128-005
DS42824
PO71GL512NC0BAWEZ
PO71WS256NDOBAEE7
S32HMD24926BAEA20
V20810-F6096-D670
5185941F60
DS4282-4
S30ML02GP
S71PL129NB0HFW4B0
gwj7
Spansion S99
S71VS064KB0ZJK1B0
S19MN02GP30TFP00
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circuit diagram of nokia 101
Abstract: S29NS032J S29NS-J VDC048 VDE044 spansion am29f part marking Am29N643 450Ball
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
circuit diagram of nokia 101
S29NS032J
VDC048
VDE044
spansion am29f part marking
Am29N643
450Ball
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Spansion S99
Abstract: s98ws256ne0fw0020 S99-50047-ES FTJ103 FLG103 50124 transistor s99 S99-50083 S99/S19 S99-50124-02
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA March 07, 2008 Obsolescence Notification No: Subject: 2689 Rev.A Obsolescence of the 110nm, 1.8V Burst Mode Mirror Bit Flash Memory product Families, including S29WS-N, S29NS-N, S71WS-N, S71NS-N, S72WS-N, S72NS-N,
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110nm,
S29WS-N,
S29NS-N,
S71WS-N,
S71NS-N,
S72WS-N,
S72NS-N,
S75WS-N,
S75NS-N,
S98WS-N
Spansion S99
s98ws256ne0fw0020
S99-50047-ES
FTJ103
FLG103
50124
transistor s99
S99-50083
S99/S19
S99-50124-02
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Untitled
Abstract: No abstract text available
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
150ided
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bjw marking code
Abstract: No abstract text available
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Data Sheet Distinctive Characteristics — —
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
bjw marking code
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