Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IC110
IXBF42N300
100ms
42N300
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IXBF42N300
IC110
IC110
100ms
100ms
42N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B15N300C
IC110
15N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF15N300C
IC110
15N300C
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IGBT 1500v 50A
Abstract: IGBT 1500v 25A
Text: Advance Technical Information IXGF25N300 High Voltage IGBT VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V
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IXGF25N300
338B2
IGBT 1500v 50A
IGBT 1500v 25A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF20N360
IC110
20N360
H7-B11)
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IXBF
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000
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IXBF42N300
IC110
IC110
100ms
100ms
42N300
IXBF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF10N300C
IC110
10N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL60N360
IC110
100ms
60N360
H9-B11-27)
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF14N300
100ms
14N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF22N300
100ms
22N300
3-10-14-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF20N360
IC110
20N360
H7-B11)
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBH14N300HV VCES = 3000V IC110 = 14A VCE sat 2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000
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IXBA14N300HV
IXBH14N300HV
IC110
O-263HV
100ms
14N300
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IXGF36N300
Abstract: 36N30 Application note for IXGF36N300 igbt 1500V 36N300
Text: High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient
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IXGF36N300
IC110
36N300
8-27-08-C
IXGF36N300
36N30
Application note for IXGF36N300
igbt 1500V
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT VCES = 3000V IC25 = 36A VCE sat ≤ 2.7V IXGF36N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF36N300
IC110
36N300
11-23-09-D
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IXGF36N300
Abstract: igbt 1500v 36n300 36N30
Text: High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF36N300
IC110
36N300
11-23-09-D
IXGF36N300
igbt 1500v
36N30
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT42N300HV
IC110
O-268
100ms
42N300
1-09-12-A
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IXBT42N300HV
Abstract: transistor 42A
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT42N300HV
IC110
O-268
IC110
100ms
42N300
1-09-12-A
IXBT42N300HV
transistor 42A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBF28N300
100ms
28N300
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IGBT 1500v 50A
Abstract: IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2
Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES
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IXGF25N300
338B2
IGBT 1500v 50A
IC tl 072
ixgf
IXGF25N300
IGBT 1500V .50A
pf98
338B2
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IGBT 1500v 50A
Abstract: IC tl 072 igbt 1500V
Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES
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IXGF25N300
338B2
IGBT 1500v 50A
IC tl 072
igbt 1500V
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBV22N300S
IC110
PLUS220SMDHV
100ms
22N300
3-10-14-A
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