2SC4131
Abstract: transistor 2sc4131 VEBO-15V
Text: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz
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2SC4131
Pulse25)
10max
50min
18typ
210typ
FM100
2SC4131
transistor 2sc4131
VEBO-15V
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
O-251
KSA1242YTU
KSA1242OTU
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Untitled
Abstract: No abstract text available
Text: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel
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MMBTA13
MMBTA14
MMBT6427
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
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KSA1242
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242OTU
KSA1242YTU
O-251
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KSA1242
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242
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STC918E
Abstract: kst40 marking code GNF
Text: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918E
29dBm
OT-523
KST-4005-000
STC918E
kst40
marking code GNF
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2SB1412
Abstract: 2SD2118
Text: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type
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2SD2118
2SB1412.
SC-63
R0039A
2SB1412
2SD2118
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Untitled
Abstract: No abstract text available
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SA1568)
O220F)
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Untitled
Abstract: No abstract text available
Text: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A
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2SC3179
2SA1262)
100max
60min
40min
15typ
60typ
MT-25
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kst tuner
Abstract: marking code GNF STC918K kst40
Text: STC918K Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918K
29dBm
OT-623F
KST-4007-000
kst tuner
marking code GNF
STC918K
kst40
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2SB1386
Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500
Text: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.
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2SD2098
2SD2118
2SB1386
2SB1412.
2SD2098
SC-62
SC-63
2SB1412
2SD2118
T100
PW500
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2SC4064
Abstract: No abstract text available
Text: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB
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2SC4064
100max
10max
50min
35max
40typ
180typ
2SA1567)
O220F)
2SC4064
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STC918SF
Abstract: kst tuner kst21
Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918SF
29dBm
OT-23F
KST-2107-000
STC918SF
kst tuner
kst21
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13001 TRANSISTOR 126 package
Abstract: STC917UF s-parameter RF POWER TRANSISTOR NPN
Text: STC917UF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=8.0 GHz Typ. @VCE=6V, IC=7mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC917UF
29dBm
OT-323F
KST-3051-000
13001 TRANSISTOR 126 package
STC917UF
s-parameter RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918SF
29dBm
OT-23F
KST-2107-000
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13001 TRANSISTOR 126 package
Abstract: STC918U marking code GNF kst30
Text: STC918U Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918U
29dBm
OT-323
KST-3050-000
13001 TRANSISTOR 126 package
STC918U
marking code GNF
kst30
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Untitled
Abstract: No abstract text available
Text: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918E
29dBm
OT-523
KST-4005-000
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Untitled
Abstract: No abstract text available
Text: Low VCE sat transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type
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2SD2118
2SB1412.
SC-63
R0039A
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ic SE 135
Abstract: No abstract text available
Text: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min
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2SA1567
100max
50min
50min
35max
40typ
330typ
ic SE 135
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Untitled
Abstract: No abstract text available
Text: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min
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2SA1567
100max
50min
50min
35max
40typ
330typ
O220F
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2SA1568
Abstract: 2SC4065 FM20
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 IEBO V V(BR)CEO ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
2SA1568)
60max
60min
50min
35max
24typ
180typ
100max
2SA1568
2SC4065
FM20
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Untitled
Abstract: No abstract text available
Text: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER l-PACK • hFE= 1 0 0 -3 2 0 VCE= -2V, lc = -0.5V • hFE= 70(Min) (VCE= -2V, lc = -4A) • Low Saturation Voltage: VcE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating
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OCR Scan
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KSA1242
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