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    KST21 Search Results

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    KST21 Price and Stock

    Molex KST-2188

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    Onlinecomponents.com KST-2188 2
    • 1 $1.617
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    • 100 $1.47
    • 1000 $0.572
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    Master Electronics KST-2188 2
    • 1 $1.617
    • 10 $1.617
    • 100 $1.47
    • 1000 $0.572
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    Molex KST-2190

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    Onlinecomponents.com KST-2190 1
    • 1 $0.5005
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    • 1000 $0.15
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    Master Electronics KST-2190 1
    • 1 $0.5005
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    • 1000 $0.15
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    Analog Devices Inc ADSP-2185LKST-210

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    Bristol Electronics ADSP-2185LKST-210 8,410
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    Rochester Electronics ADSP-2185LKST-210 35 1
    • 1 $42.59
    • 10 $42.59
    • 100 $40.04
    • 1000 $36.2
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    Analog Devices Inc ADSP2187LKST210

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    Bristol Electronics ADSP2187LKST210 80
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    ComSIT USA ADSP2187LKST210 67
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    Analog Devices Inc ADSP-2183KST-210

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    Bristol Electronics ADSP-2183KST-210 25
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    Rochester Electronics ADSP-2183KST-210 4 1
    • 1 $46.86
    • 10 $46.86
    • 100 $44.05
    • 1000 $39.83
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    Win Source Electronics ADSP-2183KST-210 400
    • 1 $67.827
    • 10 $45.218
    • 100 $45.218
    • 1000 $45.218
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    Find more KST21 price and stock on Findchips.com

    KST21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC 13001 TRANSISTOR

    Abstract: IC PC 124 STD123S STA124S
    Text: STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124


    Original     		PDF STA124S STD123S OT-23 KST-2100-000 -100mA -500mA, -50mA PC 13001 TRANSISTOR IC PC 124 STD123S STA124S

    FET MARKING CODE

    Abstract: STK596SF capacitor Microphones kst21 marking kst
    Text: STK596SF Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596SF OT-23F KST-2128-001 FET MARKING CODE STK596SF capacitor Microphones kst21 marking kst

    k602

    Abstract: K-602 STK0602 kst21
    Text: STK0602 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • Include Zener protection for ESD ruggedness. Ordering Information


    Original     		PDF STK0602 OT-23 KST-2136-000 k602 K-602 STK0602 kst21

    Untitled

    Abstract: No abstract text available
    Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application


    Original     		PDF DP030S -100mA/-10mA) DN030S DP030S OT-23F KST-2108-000

    DP200F

    Abstract: DN200F kst21
    Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.2V Typ. @IC/IB=1A/50 ㎃) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application


    Original     		PDF DN200F DP200F OT-89 KST-2125-002 DP200F DN200F kst21

    STK7002A

    Abstract: No abstract text available
    Text: STK7002A Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information


    Original     		PDF STK7002A OT-23 KST-2106-001 STK7002A

    N01 marking

    Abstract: T 2109 DN030S DP030S
    Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application


    Original     		PDF DN030S 100mA/10mA) DP030S OT-23F KST-2109-000 100mA 300mA 100mA, N01 marking T 2109 DN030S DP030S

    STC918SF

    Abstract: kst tuner kst21
    Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA


    Original     		PDF STC918SF 29dBm OT-23F KST-2107-000 STC918SF kst tuner kst21

    transistor marking p02

    Abstract: DN050S DP050S CODE P02
    Text: DP050S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.08V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN050S • Switching Application


    Original     		PDF DP050S -100mA/-10mA) DN050S OT-23F KST-2116-000 -100mA -500mA -100mA, transistor marking p02 DN050S DP050S CODE P02

    Untitled

    Abstract: No abstract text available
    Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA


    Original     		PDF STC918SF 29dBm OT-23F KST-2107-000

    Untitled

    Abstract: No abstract text available
    Text: DP030S Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030S


    Original     		PDF DP030S DN030S KST-2108-000

    transistor Marking code n03

    Abstract: ic n03 DN100S DP100S marking N03 marking code N03
    Text: DN100S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application


    Original     		PDF DN100S 400mA/20mA) DP100S OT-23F KST-2117-000 100mA 400mA, transistor Marking code n03 ic n03 DN100S DP100S marking N03 marking code N03

    STA124SF

    Abstract: Transistor STD123SF kst21
    Text: STA124SF Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123SF Ordering Information Type NO. Marking STA124SF Package Code


    Original     		PDF STA124SF STD123SF OT-23F KST-2124-001 STA124SF Transistor STD123SF kst21

    kst21

    Abstract: STK1828SF
    Text: STK1828SF Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO.


    Original     		PDF STK1828SF OT-23F KST-2123-000 kst21 STK1828SF

    SOT-23 k702

    Abstract: k702 2105 STK7002 k702 mosfet
    Text: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information


    Original     		PDF STK7002 OT-23 KST-2105-004 SOT-23 k702 k702 2105 STK7002 k702 mosfet

    DN100S

    Abstract: DP100S p03 transistor p03 transistor 3 pin IC 2901
    Text: DP100S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.25V Typ. @IC /IB =-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application


    Original     		PDF DP100S -400mA/-20mA) DN100S OT-23F KST-2118-000 -100mA -400mA, -20mA DN100S DP100S p03 transistor p03 transistor 3 pin IC 2901

    N02 Transistor

    Abstract: N02 npn DN050S DP050S N02 MARKING N02
    Text: DN050S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application.


    Original     		PDF DN050S 100mA/10mA) DP050S OT-23F KST-2115-000 100mA 500mA 100mA, N02 Transistor N02 npn DN050S DP050S N02 MARKING N02

    K702

    Abstract: STK7002F kst21 213800-1 k702 mosfet
    Text: STK7002F Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information


    Original     		PDF STK7002F OT-23F KST-2138-001 K702 STK7002F kst21 213800-1 k702 mosfet

    DN030S

    Abstract: DP030S kst21 kst210
    Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application


    Original     		PDF DP030S -100mA/-10mA) DN030S OT-23F KST-2108-000 -300mA -100mA, -10mA DN030S DP030S kst21 kst210

    STJ828SF

    Abstract: No abstract text available
    Text: STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.


    Original     		PDF STJ828SF OT-23F KST-2125-000 -10mA STJ828SF

    Untitled

    Abstract: No abstract text available
    Text: DP100S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.25V Typ. @IC/IB=-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application


    Original     		PDF DP100S -400mA/-20mA) DN100S DP100S OT-23F KST-2118-000 KST-2118-000

    DN030S

    Abstract: DP030S
    Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S


    Original     		PDF DP030S -100mA/-10mA) DN030S OT-23F KST-2108-000 -300mA -100mA, -10mA DN030S DP030S

    k702

    Abstract: SOT-23 k702 2105 k702 mosfet marking 2105 STK7002 kst21 marking K702
    Text: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information


    Original     		PDF STK7002 OT-23 KST-2105-003 k702 SOT-23 k702 2105 k702 mosfet marking 2105 STK7002 kst21 marking K702

    DN200F

    Abstract: DP200F
    Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application


    Original     		PDF DN200F A/50mA) DP200F OT-89 KST-2125-000 100mA DN200F DP200F