FZT653
Abstract: FZT753 DSA003712
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT653
FZT753
FZT653
FZT753
DSA003712
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 225 0.4 C IC/IB=10 B 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT653
FZT753
IC/10
100ms
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221D
Abstract: MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373
Text: MOTOROLA Order this document by MJE18206/D SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206 Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES
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MJE18206/D
MJE18206
MJF18206
MJE/MJF18206
MJE18206/D*
221D
MJE18206
MJE210
MJF18206
MPF930
MTP12N10
MTP8P10
MUR105
k 373
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ztx653
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT
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ZTX652
ZTX653
IC/10
100ms
ztx653
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FZT649
Abstract: FZT749 transistor FZT749
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE PARTMARKING DETAIL ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749
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OT223
FZT749
IC/10
FZT649
-500mA,
-50mA
-100mA,
100MHz
FZT649
FZT749
transistor FZT749
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MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600
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OT223
IC/10
FZT649
FZT749
100ms
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equivalent FZT651
Abstract: FZT651 FZT751 DSA003712
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001
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OT223
FZT651
FZT751
500mA,
equivalent FZT651
FZT651
FZT751
DSA003712
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PDF
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MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D
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FZT753
Abstract: FZT653 DSA003715
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL
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OT223
FZT753
FZT653
FZT753
FZT653
DSA003715
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transistor d 1557
Abstract: MGW12N120
Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW12N120/D
MGW12N120
MGW12N120/D*
TransistorMGW12N120/D
transistor d 1557
MGW12N120
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t749
Abstract: ZDT749 DSA003727
Text: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT749 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL T749 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage
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ZDT749
OT223)
-50mA,
IC/10
t749
ZDT749
DSA003727
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MJE 280 power transistor
Abstract: 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204 Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES
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MJE18204/D
MJE18204
MJF18204
MJE/MJF18204
MJE18204/D*
MJE 280 power transistor
100 Amp current 1300 volt diode
221D
MJE18204
MJE210
MJF18204
MPF930
MTP12N10
MTP8P10
MUR105
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PDF
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221D
Abstract: MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204 Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES
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MJE18204/D
MJE18204
MJF18204
MJE/MJF18204
MJE18204/D*
221D
MJE18204
MJE210
MJF18204
MPF930
MTP12N10
MTP8P10
MUR105
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mgy20n120d
Abstract: IGBT 250 amp
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
mgy20n120d
IGBT 250 amp
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MJE18206 MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art
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MJE/MJF18206
MJE18206
MJF18206
r14525
MJE18206/D
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage 0.6 C 0.5 225 0.4 E COMPLEMENTARY TYPE FZT751 IC/IB=10 C 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT651
FZT751
IC/10
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motorola 039 31
Abstract: 039 E 31 motorola MGW12N120
Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW12N120/D
MGW12N120
IGBTMGW12N120/D
motorola 039 31
039 E 31 motorola
MGW12N120
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MJE 5740
Abstract: 221D MJE18204 MJF18204 MPF930 MTP8P10 MUR105 tc5003
Text: ON Semiconductort MJE18204 MJF18204 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art
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MJE18204
MJF18204
MJE/MJF18204
r14525
MJE18204/D
MJE 5740
221D
MJE18204
MJF18204
MPF930
MTP8P10
MUR105
tc5003
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PDF
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transistor motorola 236
Abstract: MGY25N120
Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY25N120/D
MGY25N120
MGY25N120/D*
transistor motorola 236
MGY25N120
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MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
MGW20N120/D*
TransistorMGW20N120/D
MGW20N120
transistor d 1557
305 Power Mosfet MOTOROLA
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motorola 039 31
Abstract: MGW12N120 MGW12N
Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW12N120/D
MGW12N120
motorola 039 31
MGW12N120
MGW12N
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340G-02
Abstract: MGY20N120D
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
340G-02
MGY20N120D
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MGW20N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
IGBTMGW20N120/D
MGW20N120
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