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    VCE 100 IC 100MA NPN Search Results

    VCE 100 IC 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    VCE 100 IC 100MA NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ztx341

    Abstract: Vce-80V
    Text: ZTX341 140 0.16 120 hFE - Gain % VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 – MARCH 94


    Original     		PDF ZTX341 100mA 60MHz ztx341 Vce-80V

    FMMT497

    Abstract: FMMT597 0401mA DSA003696
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 – DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C


    Original     		PDF FMMT497 100mA 100mA, 250mA, 100MHz FMMT497 FMMT597 0401mA DSA003696

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.


    Original     		PDF -800mA. -100mA) BC338. BC328 -100mA -500mA, -50mA -300mA -10mA, 100MHz

    BC328

    Abstract: BC338 BC338N
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.


    Original     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338 BC338N

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.


    Original     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337

    BC328

    Abstract: BC338 transistor bc328
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.


    Original     		PDF BC338 800mA. 100mA) BC328. BC328 BC338 transistor bc328

    BC327 45V 800mA PNP Transistor

    Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.


    Original     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


    Original     		PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)


    Original     		PDF 800mA. 100mA) BC328. BC338 100mA 500mA, 300mA -10mA, 100MHz

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


    Original     		PDF BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327

    BC338N

    Abstract: BC328 BC338 2BC328
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K


    Original     		PDF BC328 -800mA. -100mA) BC338. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC338N BC328 BC338 2BC328

    BC328

    Abstract: BC338 2BC338
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G


    Original     		PDF BC338 800mA. 100mA) BC328. 00TER 100mA 500mA, 300mA -10mA, 100MHz BC328 BC338 2BC338

    GBC327

    Abstract: GBC337
    Text: ISSUED DATE :2005/10/21 REVISED DATE : GBC337 NPN SILICON TRANSISTOR Description The GBC337 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 Package Dimensions D TO-92


    Original     		PDF GBC337 GBC337 100mA GBC327 GBC327

    GBC328

    Abstract: GBC338
    Text: ISSUED DATE :2005/10/21 REVISED DATE : GBC338 NPN SILICON TRANSISTOR Description The GBC338 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328 Package Dimensions D TO-92


    Original     		PDF GBC338 GBC338 100mA GBC328 GBC328

    BC327

    Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    BC337 45V 800mA NPN Transistor

    Abstract: transistor bc327 BC327 BC337 bc337 45v 800mA
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC327.


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor transistor bc327 BC327 BC337 bc337 45v 800mA

    TRANSISTOR BC338

    Abstract: BC328 BC338
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.


    OCR Scan     		PDF BC338 800mA. 100mA) BC328. TRANSISTOR BC338 BC328 BC338

    BC327 45V 800mA PNP Transistor

    Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC328. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF BC338 800mA. 100mA) BC328. BC328 BC338

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    Darlington pair IC

    Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
    Text: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V


    OCR Scan     		PDF SSTA56 MMSTA56 100nA 100mA 500mA 100mA 50MHz MMSTA64 Darlington pair IC marking cb b54 marking MPT3 MARKING DF ad marking diagram

    f-30MHz

    Abstract: 2N2483 2N2484
    Text: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /


    OCR Scan     		PDF S00fiA 30MHz 10fiA 100mA 10/1A 140KH2 2N2483 2N2484 f-30MHz 2N2483 2N2484