Diode LT 404
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 312 GDL 120 - 404 WT E/U Absolute Maximum Ratings Symbol | Conditions Values Units 1200 - 5 5 . . . + 150 V V A A °C 3 0 0 0 5) V 240 A A A kA2s 11 IGBT & Invcsrse Diode Vces Operating DC link voltage Vc c 10) Theatsink — 2 5 °C
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
Diode LT 404
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GD74F04
Abstract: No abstract text available
Text: GD74F04 PRELIMINARY DATA SHEET HEX INVERTER Description The GD74F04 contains 6 logic inverters which accept standard TTL input signal and standard TTL output level. They have a greater noise margin than conventional inverters. Pin Configuration Vcc 6Y 6A 5Y
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GD74F04
GD74F04
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74F14
Abstract: No abstract text available
Text: Signetics FAST 74F14 Schmitt Trigger Hex Inverter Schmitt Trigger Product Specification FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL 5.0 ns 74F14 18 mA DESCRIPTION The 74F14 contains six logic inverters which accept standard TTL input signals and provide
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74F14
74F14
500ns
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Untitled
Abstract: No abstract text available
Text: GD74F04 PRELIMINARY DATA SHEET HEX INVERTER Description Pin Configuration The GD74F04 contains 6 logic inverters which accept standard TTL input signal and standard TTL output level. They have a greater noise margin than conventional inverters. Vcc 6Y 6A 5Y
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GD74F04
GD74F04
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —
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Untitled
Abstract: No abstract text available
Text: m N E R B PM150CSA060 C In tB fflfT lO C l M o d u lG Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three Phase IGBT Inverter Output 150 Amperes/600 Volts - Y (4 TYP.) 1. V upc 2. UFo 3. U r 4. V upi 5. V vpc 6. VFo
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PM150CSA060
Amperes/600
20kHz.
T4b21
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7Z04
Abstract: SOT70 Package sot70 NC7SZ04M5
Text: NC7SZ04 F A I R C H I L D SEM ICONDUCTOR TM NC7SZ04 TinyLogic UHS Inverter General Description Features The NC7SZ04 is a single inverter from Fairchild's Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced CMOS technology to achieve ultra high
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NC7SZ04
NC7SZ04
500ii
7Z04
SOT70 Package
sot70
NC7SZ04M5
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Untitled
Abstract: No abstract text available
Text: Í K M E R E PM150RSA060 X Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 lilt & llif n O d M o d u lB Three Phase + Brake IGBT Inverter Output 150 Amperes/600 Volts 1. V u pc 1 1 .W p 2. UFo 1 2 .V W P I 3. U p 4 . V upi
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PM150RSA060
Amperes/600
20kHz.
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GDIP1-T14
Abstract: 54F04 GDFP1-F14
Text: Product specification Philips Semiconductors Military FAST Products Hex inverter 54F04 PIN CONFIGURATION ORDERING INFORMATION ORDER CODE DESCRIPTION PACKAGE DESIGNATOR* 14-Pin Ceramic DIP 54F04/BCA GDIP1-T14 14-Pin Ceramic Flat Pack 54F04/BDA GDFP1-F14 a 20-Pin Ceramic LLCC
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54F04
14-Pin
54F04/BCA
GDIP1-T14
54F04/BDA
GDFP1-F14
20-Pin
54F04/B2A
CQCC2-N20
GDIP1-T14
54F04
GDFP1-F14
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562 sot23
Abstract: Transistor Bo 47
Text: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C
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Q62702-C2356
OT-23
562 sot23
Transistor Bo 47
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Hybrid Power Module M H P M 7A 15S120D C 3 Integrated Power Stage for 3.0 hp 460 VAC Motor Drive Motorola Preferred Device This VersaPower module integrates a 3-phase inverter, 3-phase rectifier, brake, and temperature sense in a single
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15S120D
MPM7A15S120DC3
BAV99LT1
7A15S120DC3
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GRM1552C1H
Abstract: MURATA GRM1552C1H MCR01MZSJ TG2211AFT MCR01MZS grm1552c gaas spdt switch
Text: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter
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TG2211AFT
GRM1552C1H
MURATA GRM1552C1H
MCR01MZSJ
TG2211AFT
MCR01MZS
grm1552c
gaas spdt switch
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MCR01MZSJ
Abstract: GRM1552C1H MCR01MZS MURATA GRM1552C1H MURATA GRM1552C1H CAPACITOR TG2211AFT grm1552c
Text: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter
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TG2211AFT
MCR01MZSJ
GRM1552C1H
MCR01MZS
MURATA GRM1552C1H
MURATA GRM1552C1H CAPACITOR
TG2211AFT
grm1552c
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154j capacitor
Abstract: D406 DM74ALS DM74ALS14 DM74ALS14M DM74ALS14N DM74ALS14SJ M14A M14D N14A
Text: EM ICDNDUCTOR t DM74ALS14 Hex Inverter with Schmitt Trigger Inputs General Description High input noise im m unity S w itching specification at 50 pF This device contains six independent gates, each o f which perform s the logic IN VER T function. Each input has hyster
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DM74ALS14
154j capacitor
D406
DM74ALS
DM74ALS14
DM74ALS14M
DM74ALS14N
DM74ALS14SJ
M14A
M14D
N14A
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2n5039
Abstract: 2n5038 2N5038 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Itransistors "Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, w ide-band amplifiers and power oscillators in
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2N5038*
2N5039
2n5039
2n5038
2N5038 transistor
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54LS04
Abstract: 54LS04/BCAJC
Text: MOTOROLA M ilitary 5 4 L S 0 4 H ex-Input Inverter G a te MP0 ELECTRICALLY TESTED PER: MIL-M-38510/30003 mini LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 V4 AVAILABLE AS: 1 JAN: JM38510/30003BXA 2) SMD: N/A 3)883: 54LS04/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C
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MIL-M-38510/30003
JM38510/30003BXA
54LS04/BXAJC
56A-02
54LS04
54LS04/BCAJC
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm DM74AS34 Hex Non-Inverter General Description • Switching specifications guaranteed over full temperature and Vc c range ■ Advanced oxide-isolated, ion-implanted SchottkyTTL process These devices contain six independent gates, each of which
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DM74AS34
DS006281-1
DM74AS34N
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Untitled
Abstract: No abstract text available
Text: A I R C H I L D Revised March 1999 S E M IC D N D U C T O R tm NC7SZ04 TinyLogic UHS Inverter General Description Features • S pace saving S O T23 or SC70 5-lead package High Speed Series of TinyLogic™. T h e device is fabricated w ith advanced C M OS technology to achieve ultra high
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NC7SZ04
C7SZ04
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7S04
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm NC7S04 TinyLogic HS Inverter General Description Features The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes inherently guard both input
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NC7S04
NC7S04
7S04
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MURATA GRM1552C1H
Abstract: MURATA GRM1552C1H CAPACITOR
Text: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter
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TG2211AFT
MURATA GRM1552C1H
MURATA GRM1552C1H CAPACITOR
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4901 Unit in mm SW ITC H IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • Including Two Devices in US6 Ultra Super Mini Type with 6 leads With Built-in Bias Resistors
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RN4901
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Untitled
Abstract: No abstract text available
Text: PM75RSA060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In t & llif T lO d M O Ö U lB Three Phase + Brake IGBT Inverter Output 75 Amperes/600 Volts 1. Vupc 11.Wp 2. UFo 12. Vwpi 3. Up 13.VNC H . V ni 4. Vupi 5. Vvpc 15. Br
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PM75RSA060
Amperes/600
20kHz.
72l14b21
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Untitled
Abstract: No abstract text available
Text: RN4905 RN4905 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN4905
RN4905)
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BCR198
Abstract: KTY 120
Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C
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47kil)
Q62702-C2266
OT-23
BCR198
KTY 120
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