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    VBE 10V Search Results

    VBE 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    VBE 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPT6517

    Abstract: CMPT6520
    Text: Central TM Semiconductor Corp. 315 R3 28-Mar 2001 SYMBOL VBE (SAT) TEST CONDITIONS IC=30mA, IB=3.0mA MIN MAX 0.90 UNITS V 2.0 V VBE (ON) hFE VCE=10V, IC=100mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 30 200 VCE=10V, IC=50mA VCE=10V, IC=100mA


    Original     		PDF 28-Mar 100mA 20MHz CMPT6517) CMPT6520) OT-23 CMPT6517 CMPT6520

    MPSH10P

    Abstract: DSA003760
    Text: MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - Volts hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible


    Original     		PDF MPSH10P 650MHz 500MHz 100MHz MPSH10P DSA003760

    ZTX957

    Abstract: TO-1 amps pnp transistor DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX957 -100mA, 50MHz -500mA, -50mA -100V -10mA, 100ms ZTX957 TO-1 amps pnp transistor DSA003780

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time


    Original     		PDF FXT2907A 100KHz -150mA -15mA -150mA, 200ns -15mA*

    BC858C

    Abstract: 65 marking sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V


    Original     		PDF BC858C BC858C 65 marking sot23

    Harris CA3046

    Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
    Text: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max


    Original     		PDF CA3045, CA3046 CA3045 CA3046 1-800-4-HARRIS Harris CA3046 an5296 d143 T transistor CA3045 HARRIS AN5296 application note CA3046 equivalent CA3045F CA3046 Harris

    FMMT2907

    Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
    Text: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0


    Original     		PDF FZT2907 FZT2907A FMMT2907 FMMT2907A 100KHz -150mA, -15mA -150mA FMMT2907 FMMT2907A FZT2907 FZT2907A DSA003709

    MPS2907A

    Abstract: No abstract text available
    Text: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns


    Original     		PDF MPS2907A 100KHz -150mA -15mA -150mA, -15mA* MPS2907A

    FXT2907A

    Abstract: No abstract text available
    Text: FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns


    Original     		PDF FXT2907A 100KHz -150mA -15mA -150mA, 200ns -15mA* FXT2907A

    BC858C

    Abstract: 2KW sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V


    Original     		PDF BC858C BC858C 2KW sot23

    ZTX849

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX849 100mA, 50MHz 100mA 100ms ZTX849 NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777

    ZTX857

    Abstract: 300V transistor npn 2a DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX857 100mA, 100MHz 250mA, 500mA, 100ms ZTX857 300V transistor npn 2a DSA003778

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: DMMT3906W DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package SOT-363 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)


    Original     		PDF DMMT3906W OT-363 J-STD-020C DS30312

    MARKING k4a

    Abstract: No abstract text available
    Text: SPICE MODEL: DMMT3904W DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Intrinsically Matched NPN Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)


    Original     		PDF DMMT3904W OT-363 OT-363 J-STD-020C MIL-STD-202, DS30311 MARKING k4a

    ZTX958

    Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo


    Original     		PDF ZTX958 -500mA, -10mA, -50mA -100V -100mA, 50MHz ZTX958 TO-1 amps pnp transistor transistor 3330 DSA003780

    ZTX949

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX949 -100mA, 50MHz -400mA 400mA, -10mA, 100ms ZTX949 DSA003779

    ztx953

    Abstract: IN 3319 B DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*


    Original     		PDF ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779

    DMMT3906W

    Abstract: DMMT3906W-7 J-STD-020A
    Text: DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)


    Original     		PDF DMMT3906W OT-363 OT-363, J-STD-020A MIL-STD-202, DS30312 DMMT3906W DMMT3906W-7 J-STD-020A

    ZTX955

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX955 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX955 DSA003780

    2N4400

    Abstract: No abstract text available
    Text: i TOSHIBA SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SUITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current : ICEV^'lOOnAiMax.), lBEV= 100nA(Max.) <? VCe =-35V, VBE=0.4V


    OCR Scan     		PDF ZN44UZ 100nA -150mA, -15mA 2N4400 150mA 500mA -15mA -500mA, 2N4400

    LM394BN

    Abstract: SSM2210P SMM210 OP-97 SSM-2210 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance
    Text: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX • Excellent Current Gain Match.0.5% TYP • Tight VBE Match VQS . 200^V MAX


    OCR Scan     		PDF SSM-2210 100Hz, 200HV 03hV/Â 200MHz LM394BN/CN SSM-2210 LM394BN SSM2210P SMM210 OP-97 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS39Q6 -50nA -50mA, YTS3904

    YTS3904

    Abstract: No abstract text available
    Text: TO SHIBA YTS3904 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqev = 50nA Max. , Ibev = 50nA (Max.) - @ VCE = 30V, VBE = 3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3904 YTS3906 300ns 1C19V YTS3904

    2N4403

    Abstract: No abstract text available
    Text: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan     		PDF 2N4403 -100nA 100nA -150mA, -15mA 2N4401 X10-4 2N4403