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silicon epitaxial mesa diode Abstract: GVD1404-001 Text: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC	OCR Scan	PDF	GVD1400 GVD1401-004 GVD1404-004 GVD1401-001 GVD1404-001 OT-23 silicon epitaxial mesa diode GVD1404-001

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silicon epitaxial mesa diode

Abstract: GVD1404-001
Text: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

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GVD1400 GVD1401-004 GVD1404-004 GVD1401-001 GVD1404-001 OT-23 silicon epitaxial mesa diode GVD1404-001