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    M28F256A

    Abstract: FZJ 101 1N914
    Text: - i q f a - y g o £ = 7 S G S -1 H O M S O N D l@IILIÊÏ @R!10 êi M28F256A CMOS 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F256A 120ns 200pA M28F256A M28F256Acle PDIP32 0to70Â PLCC32 FZJ 101 1N914

    AAZZ

    Abstract: m23c100
    Text: / = T SGS-THOMSON * J Æ > RfflD g^(Q iLi(gU^ iD(gi M23C1000 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION


    OCR Scan     		PDF M23C1000 100ns M23C1000 100ns VA00665 PDIP28 AAZZ m23c100