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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TH I RD A N G L E REV I S I O N S PROJ. NOTES: I . REV M A T E R I A L S AND F I N I S H E S : BODY - PHOSPHOR B R O N Z E , CONTACT FERRULE - INSULATOR BRASS, BRASS, - NICKEL RELEASE PLATING GOLD PLATING NICKEL PLATING NOTE 4 NOTE PTFE SHT 4 2 'OR '8 PT 2 2 7 - T I 200	OCR Scan	05-Sep-1 200\RD-DM	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access	OCR Scan	TC59S6408/04FT/FTL-80 152-WORDX4-BANKx8-BIT 304-WORDx4-BANKx4-BIT TC59S6408FT/FTL TC59S6404FT/FTL	PDF
hyundai hy 214 Abstract: 202530 1DG05-22-MA Text: - HY UNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O AL 64K X 16 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op	OCR Scan	HY63V16100 576-bit 20/25/30ns HY63V16100S 140mA HY63V16100L 10MAX 004MAX hyundai hy 214 202530 1DG05-22-MA	PDF
Untitled Abstract: No abstract text available Text: MOSEL MS64101 ADVANCE INFORMATION 32K x 9 High Speed CMOS Static RAM FEATURES DESCRIPTION • High speed - 25/35 ns Max. The MOSEL MS64101 is a high performance, low power CMOS static RAM organized as 32768 words by 9 bits. The device supports easyrnemory expansion with both an	OCR Scan	MS64101 MS64101 715mW 138mW PID050 S64101-25NC P32-3 S64101-35NC S64101-25FC	PDF
628128 dip Abstract: 628128 RAM 628128 Text: M O SEL MS628128 1048576 131,072 x 8 CMOS STATIC RAM WITH DATA RETENTION AND LOW POWER v r r e u c advanced INFORMA TION Features Description • Available in 80/100/120 ns (Max.) ■ Automatic power-down when chip disabled ■ Lower power consumption: MS628128	OCR Scan	MS628128 MS628128L 500mV MS628128-80PC MSG28128L-80PC MS628128-10PC MS628128L-10PC MS628128-12PC 628128 dip 628128 RAM 628128	PDF
1A11BS Abstract: No abstract text available Text: ADE-203-304A Z HM5216805 Series HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI AH inputs and outputs are referred to the rising edge of the clock input. The HM521680S Series,	OCR Scan	ADE-203-304A HM5216805 HM5216405 576-word 152-word HM521680S HM5216805TT-10 HM5216805TT-12 HM5216805TT-15 HM5216405TT-10 1A11BS	PDF
Untitled Abstract: No abstract text available Text: 10 ÎÈK □ s D - 5 i3 8 7 - o o 6 £ # . 'S T i< ''R E F E R TO S D -5 1 3 8 7 - 0 0 6 S S f t l •120011/ \|J N U M BER OF C O N N EC TO R : 1 2 0 0 P C S /R E E L ' - F f - y S i LE A D TAPE LEN G TH 2 5 ±10 t -,7f-y a rn » TOP T A P E PU LL PART	OCR Scan	SD-51387-006 EN-02JA1021)	PDF
Untitled Abstract: No abstract text available Text: IW* VITELIC V 5 3 C 4 6 4 FA M ILY H IG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT FA ST PAGE M O D E C M O S D Y N A M IC R A M 7 0 /7 0 L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns	OCR Scan	80/80L 10/10L 12/12L V53C464 V53C464L V53C464	PDF
siemens stu Abstract: TO-220-Anschl DIN iec 286-3 part 1 din IEC Teil 2-20 Siemens Halbleiter Text: SIEMENS 1 Montagehinweise Je d e r S IP M O S -H a lb le ite r ist durch die a u fgestem p elte Typen- und P o la ritä tsb e zeichn ung eind eutig ge ken nze ichn et. Die E inbaulage der H a lbleite r ist beliebig. 1.1 Bedrahtete Halbleiter im TO-2181	OCR Scan	T0-220-Geh O-218/TO-220Anschl T0-220/ O-218 T0-220 siemens stu TO-220-Anschl DIN iec 286-3 part 1 din IEC Teil 2-20 Siemens Halbleiter	PDF