Untitled
Abstract: No abstract text available
Text: TH I RD A N G L E REV I S I O N S PROJ. NOTES: I . REV M A T E R I A L S AND F I N I S H E S : BODY - PHOSPHOR B R O N Z E , CONTACT FERRULE - INSULATOR BRASS, BRASS, - NICKEL RELEASE PLATING GOLD PLATING NICKEL PLATING NOTE 4 NOTE PTFE SHT 4 2 'OR '8 PT 2 2 7 - T I 200
|
OCR Scan
|
PDF
|
05-Sep-1
200\RD-DM
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access
|
OCR Scan
|
PDF
|
TC59S6408/04FT/FTL-80
152-WORDX4-BANKx8-BIT
304-WORDx4-BANKx4-BIT
TC59S6408FT/FTL
TC59S6404FT/FTL
|
hyundai hy 214
Abstract: 202530 1DG05-22-MA
Text: - HY UNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O AL 64K X 16 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op
|
OCR Scan
|
PDF
|
HY63V16100
576-bit
20/25/30ns
HY63V16100S
140mA
HY63V16100L
10MAX
004MAX
hyundai hy 214
202530
1DG05-22-MA
|
Untitled
Abstract: No abstract text available
Text: MOSEL MS64101 ADVANCE INFORMATION 32K x 9 High Speed CMOS Static RAM FEATURES DESCRIPTION • High speed - 25/35 ns Max. The MOSEL MS64101 is a high performance, low power CMOS static RAM organized as 32768 words by 9 bits. The device supports easyrnemory expansion with both an
|
OCR Scan
|
PDF
|
MS64101
MS64101
715mW
138mW
PID050
S64101-25NC
P32-3
S64101-35NC
S64101-25FC
|
628128 dip
Abstract: 628128 RAM 628128
Text: M O SEL MS628128 1048576 131,072 x 8 CMOS STATIC RAM WITH DATA RETENTION AND LOW POWER v r r e u c advanced INFORMA TION Features Description • Available in 80/100/120 ns (Max.) ■ Automatic power-down when chip disabled ■ Lower power consumption: MS628128
|
OCR Scan
|
PDF
|
MS628128
MS628128L
500mV
MS628128-80PC
MSG28128L-80PC
MS628128-10PC
MS628128L-10PC
MS628128-12PC
628128 dip
628128 RAM
628128
|
1A11BS
Abstract: No abstract text available
Text: ADE-203-304A Z HM5216805 Series HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI AH inputs and outputs are referred to the rising edge of the clock input. The HM521680S Series,
|
OCR Scan
|
PDF
|
ADE-203-304A
HM5216805
HM5216405
576-word
152-word
HM521680S
HM5216805TT-10
HM5216805TT-12
HM5216805TT-15
HM5216405TT-10
1A11BS
|
Untitled
Abstract: No abstract text available
Text: 10 ÎÈK □ s D - 5 i3 8 7 - o o 6 £ # . 'S T i< ''R E F E R TO S D -5 1 3 8 7 - 0 0 6 S S f t l •120011/ |J N U M BER OF C O N N EC TO R : 1 2 0 0 P C S /R E E L ' - F f - y S i LE A D TAPE LEN G TH 2 5 ±10 t -,7f-y a rn » TOP T A P E PU LL PART
|
OCR Scan
|
PDF
|
SD-51387-006
EN-02JA1021)
|
Untitled
Abstract: No abstract text available
Text: IW* VITELIC V 5 3 C 4 6 4 FA M ILY H IG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT FA ST PAGE M O D E C M O S D Y N A M IC R A M 7 0 /7 0 L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns
|
OCR Scan
|
PDF
|
80/80L
10/10L
12/12L
V53C464
V53C464L
V53C464
|
siemens stu
Abstract: TO-220-Anschl DIN iec 286-3 part 1 din IEC Teil 2-20 Siemens Halbleiter
Text: SIEMENS 1 Montagehinweise Je d e r S IP M O S -H a lb le ite r ist durch die a u fgestem p elte Typen- und P o la ritä tsb e zeichn ung eind eutig ge ken nze ichn et. Die E inbaulage der H a lbleite r ist beliebig. 1.1 Bedrahtete Halbleiter im TO-2181
|
OCR Scan
|
PDF
|
T0-220-Geh
O-218/TO-220Anschl
T0-220/
O-218
T0-220
siemens stu
TO-220-Anschl
DIN iec 286-3 part 1
din IEC Teil 2-20
Siemens Halbleiter
|