hyundai hy 214
Abstract: 202530 1DG05-22-MA
Text: - HY UNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O AL 64K X 16 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op
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HY63V16100
576-bit
20/25/30ns
HY63V16100S
140mA
HY63V16100L
10MAX
004MAX
hyundai hy 214
202530
1DG05-22-MA
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1DG05-22-MAY96
Abstract: No abstract text available
Text: HYUNDAI H Y 6 3 V 1 6 1 0 0 A S /H Y 6 3 V 1 6 1 O O A L 64K 16 Bit FAST SRAM X PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The HY63V16100 uses sixteen common input and output lines and has an output enable pin which op
|
OCR Scan
|
PDF
|
HY63V16100
576-bit
20/25/30ns
HY63V16100S
140mA
HY63V16100L
10MAX
004MAX
1DG05-22-MAY96
|