Untitled
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
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Original
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PDF
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NVMFS5830NL
NVMFS5830NL/D
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V5830L
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
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Original
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PDF
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NVMFS5830NL
AEC-Q101
NVMFS5830NL/D
V5830L
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V5830L
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
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Original
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PDF
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NVMFS5830NL
AEC-Q101
NVMFS5830NL/D
V5830L
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Untitled
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product
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Original
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PDF
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NVMFS5830NL
NVMFS5830NLWF
NVMFS5830NL/D
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Untitled
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product
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Original
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PDF
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NVMFS5830NL
NVMFS5830NLWF
AEC-Q101
NVMFS5830NL/D
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