Untitled
Abstract: No abstract text available
Text: Package Diagram Plastic Small Outline J - Bend 20-Lead 300-Mil Molded SOJ V5 51-85029-A 24-Lead (300-Mil) Molded SOJ V13 51-85030-A 1 Package Diagram 28-Lead (300-Mil) Molded SOJ V21 51-85031-B 28-Lead (400-Mil) Molded SOJ V28 51-85032-A 2 Package Diagram
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Original
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20-Lead
300-Mil)
1-85029-A
24-Lead
1-85030-A
28-Lead
51-85031-B
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PDF
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soj 36
Abstract: V28 Package SOJ 24 diode in 400 Molded SOJ V34 V32 Package
Text: Package Diagram Plastic Small Outline J - Bend 20-Lead 300-Mil Molded SOJ V5 24-Lead (300-Mil) Molded SOJ V13 1 Package Diagram 28-Lead (300-Mil) Molded SOJ V21 28-Lead (400-Mil) Molded SOJ V28 2 Package Diagram 32-Lead (300-Mil) Molded SOJ V32 32-Lead (400-Mil) Molded SOJ V33
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Original
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20-Lead
300-Mil)
24-Lead
28-Lead
400-Mil)
32-Lead
soj 36
V28 Package
SOJ 24
diode in 400
Molded SOJ V34
V32 Package
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PDF
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Molded SOJ V34
Abstract: No abstract text available
Text: Package Diagram Plastic Small Outline J - Bend 20-Lead 300-Mil Molded SOJ V5 24-Lead (300-Mil) Molded SOJ V13 1 Package Diagram 28-Lead (300-Mil) Molded SOJ V21 28-Lead (400-Mil) Molded SOJ V28 2 Package Diagram 32-Lead (300-Mil) Molded SOJ V32 32-Lead (400-Mil) Molded SOJ V33
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Original
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20-Lead
300-Mil)
24-Lead
28-Lead
400-Mil)
32-Lead
Molded SOJ V34
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PDF
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soj 36
Abstract: 51-85041-A 85031 SOJ 24 V28 Package V32 Package V36 Package 51-85082-B 300MIL
Text: Package Diagram Plastic Small Outline J - Bend 20-Lead 300-Mil Molded SOJ V5 51-85029-A 24-Lead (300-Mil) Molded SOJ V13 51-85030-A 1 Package Diagram 28-Lead (300-Mil) Molded SOJ V21 51-85031-B 28-Lead (400-Mil) Molded SOJ V28 51-85032-A 2 Package Diagram
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Original
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20-Lead
300-Mil)
1-85029-A
24-Lead
1-85030-A
28-Lead
51-85031-B
soj 36
51-85041-A
85031
SOJ 24
V28 Package
V32 Package
V36 Package
51-85082-B
300MIL
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PDF
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c1947
Abstract: C1943 7C196 CY7C194 CY7C195 CY7C196 C1945 c1946 a8426 A9525
Text: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features 12 ns Output enable OE feature (7C195 and 7C196) 880 mW Low standby power 220 mW TTL Ćcompatible inputs and outputs Automatic powerĆdown when deselected Logic Block Diagram Pin Configurations INPUT BUFFER
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Original
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CY7C194
CY7C195
CY7C196
CY7C194,
CY7C195,
CY7C196)
CY7C194
c1947
C1943
7C196
CY7C195
CY7C196
C1945
c1946
a8426
A9525
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PDF
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CY7C425
Abstract: CY7C419 CY7C420 CY7C421 CY7C429 CY7C432 CY7C433 IDT7200 MIL-STD-1835C D1256
Text: CY7C419/21/25/29/33 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features D data outputs go to the highĆimpedance state when R is HIGH. Functional Description 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory D D D The CY7C419, CY7C420/1, CY7C424/5,
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Original
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CY7C419/21/25/29/33
CY7C419,
CY7C420/1,
CY7C424/5,
CY7C428/9,
CY7C432/3
600mil
300mil
CY7C425
CY7C419
CY7C420
CY7C421
CY7C429
CY7C432
CY7C433
IDT7200
MIL-STD-1835C
D1256
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PDF
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CY7C419
Abstract: CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43
Text: fax id: 5404 /25/29/ CY7C419/21/25/29/33 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features • 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of
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Original
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CY7C419/21/25/29/33
300-mil
IDT7200,
IDT7201,
IDT7202,
IDT7203,
IDT7204
CY7C419
CY7C420
CY7C421
CY7C425
IDT7200
IDT7201
IDT7202
IDT7203
IDT7204
7C43
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PDF
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B 503 Potentiometers
Abstract: 2SK2500 c420 diode CY7C425 P15 Package CY7C419 CY7C420 CY7C421 IDT7200 IDT7201
Text: 1CY 7C41 9/ 21/2 5/2 9/ 33 CY7C419/21/25/29/3 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features • 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of
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Original
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CY7C419/21/25/29/3
300-mil
IDT7200,
IDT7201,
IDT7202,
IDT7203,
IDT7204
B 503 Potentiometers
2SK2500
c420 diode
CY7C425
P15 Package
CY7C419
CY7C420
CY7C421
IDT7200
IDT7201
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PDF
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CY7C1399B
Abstract: UAL-50
Text: PRELIMINARY CY7C1399B 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 10/12/15 ns • Low active power — 180 mW max. • Low CMOS standby power (L)
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Original
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CY7C1399B
CY7C1399B
UAL-50
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PDF
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CY7C199-35VI
Abstract: CY7C199 CY7C199-15ZC 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-8
Text: CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)
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Original
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CY7C199
CY7C199
300-mil-wide
CY7C199-35VI
CY7C199-15ZC
7C199-10
7C199-12
7C199-15
7C199-20
7C199-25
7C199-35
7C199-8
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PDF
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51-85071-F
Abstract: C199 CY7C199B CY7C199B-35VC
Text: CY7C199B PRELIMINARY 32K x 8 Static RAM Features is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199B is in
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Original
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CY7C199B
CY7C199B
300-mil-wide
51-85071-F
C199
CY7C199B-35VC
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PDF
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San Ace 80
Abstract: CY7C199-25SC 7C199-10 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199
Text: fax id: 1030 1CY 7C19 9 CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)
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Original
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CY7C199
CY7C199
300-mil-wide
San Ace 80
CY7C199-25SC
7C199-10
7C199-15
7C199-20
7C199-25
7C199-35
7C199-45
7C199-8
C199
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PDF
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c1399
Abstract: C1399 transistor CY7C1399
Text: CY7C1399 32K x 8 3.3V Static RAM Features • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 µW (max.), f=fMAX • 2.0V data retention (L)
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Original
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CY7C1399
c1399
C1399 transistor
CY7C1399
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PDF
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Untitled
Abstract: No abstract text available
Text: 399 CY7C1399 32K x 8 3.3V Static RAM Features • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 µW (max.), f=fMAX • 2.0V data retention (L)
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Original
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CY7C1399
CY7C1399
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PDF
|
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7C199-10
Abstract: 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199 CY7C199
Text: fax id: 1030 CY7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard
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Original
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CY7C199
CY7C199
300-mil-wide
7C199-10
7C199-12
7C199-15
7C199-20
7C199-25
7C199-35
7C199-45
7C199-8
C199
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PDF
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CY7C
Abstract: 432-30D C4206 4407C
Text: p v « *y 1 i. p X : CY7C419/21/25/29/3 - 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory Dual-port RAM cell Asynchronous read/write High-speed 50.0-M H z read/write independent of
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OCR Scan
|
CY7C419/21/25/29/3
CY7C
432-30D
C4206
4407C
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PDF
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CY7C425-15JI
Abstract: 7C419
Text: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width
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OCR Scan
|
300-mil
IDT7200,
IDT7291,
IDT7202,
IDT7203,
IDT7204
CY7C419,
CY7C420/1,
CY7C424/5,
CY7C425-15JI
7C419
|
PDF
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CY7C419
Abstract: IDT7200 IDT7201 IDT7202 IDT7203 1DT7 CY7C424-40DMB CY7C421-30AC cy7c421
Text: CY7C419/21/25/29/33 ’* CYPRESS Features 256x9,512x9, lK x9, 2Kx9, 4K x 9 C ascadable FIFO Functional Description • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write
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OCR Scan
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CY7C419/21/25/29/33
300-mil
IDT7200,
IDT7201,
IDT7202,
IDT7203,
1DT7204
256x9
512x9,
CY7C419
IDT7200
IDT7201
IDT7202
IDT7203
1DT7
CY7C424-40DMB
CY7C421-30AC
cy7c421
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PDF
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B 503 Potentiometers
Abstract: cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204
Text: CY7C419/21/25/29/33 r* CYPRESS Features • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent o f depth/width • Low operating power — I c c i = 35 mA
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OCR Scan
|
CY7C419/21/25/29/33
300-mil
IDT7200,
IDT7201,
IDT7202,
IDT7203,
IDT7204
256x9
512x9,
B 503 Potentiometers
cy7c421
COML-55
FF p21
CY7C419
IDT7200
IDT7201
IDT7202
IDT7203
IDT7204
|
PDF
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Untitled
Abstract: No abstract text available
Text: I /¿0/9U Revision: August 18, 1994 CY7C419/21/25/29/33 / CYPRESS 256x9,512x9, 1K x 9, 2Kx9, 4K x 9 Cascadable FIFO Functional Description Features • 256 z 9,512 x 9 ,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write
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OCR Scan
|
CY7C419/21/25/29/33
256x9
512x9,
300-mil
toIDT720s.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fax id: 1030 CY7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consum p tion by 81% when deselected. The C Y7C 199 is in the standard
|
OCR Scan
|
CY7C199
300-m
|
PDF
|
Y7C425
Abstract: 2561b B 503 Potentiometers U 2561B V0120 CY7C428-25PC uv led 365 CY7C419 CY7C428 CY7C429
Text: /U H £ U . I l/ ^ D / 9 U Revision: August 18,1994 CY7C419/21/25/29/33 • / C Y P R E S S 2 5 6x 9, 5 1 2 x 9, I K x 9, 2Kx9T 4K x 9 Cascadable FIFO Features Functional Description • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell
|
OCR Scan
|
300-mil
toIDT7200,
EDT7201,
IDT7202,
IDT7203,
IDT7204
CY7C419/21/25/29/33
Y7C425
2561b
B 503 Potentiometers
U 2561B
V0120
CY7C428-25PC
uv led 365
CY7C419
CY7C428
CY7C429
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fax id: 1030 CY7C199 3 2 K x 8 Static RAM provided by an active LOW chip enable CE and active LOW output enable (0 1 ) and three-state drivers. This device has an automatic power-down feature, reducing the power consump tion by 81 % when deselected. The CY7C199 is in the standard
|
OCR Scan
|
CY7C199
CY7C199
300-mil-wide
|
PDF
|
CY7C199-20vi
Abstract: No abstract text available
Text: fax id: 1030 CY7C199 32K x 8 Static RAM provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consump tion by 81% when deselected. The CY7C199 is in the standard
|
OCR Scan
|
CY7C199
CY7C199
300-mil-wide
CY7C199-20vi
|
PDF
|