Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 V17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17400B
V16400B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: A/A/57 V17400B Fast Page Mode CMOS 4Mx4bit Dynamic RAM NPN>a DESCRIPTION The V17400B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4 bits. The V17400B series is fabricated with advanced CMOS technology and designed with innovative de
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/A/57
V17400B
NN51V17400B
NN51V17400AL
NN51V174Q0BXX
128ms
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M51V17400-60
Abstract: M51V17400 M51V17 MSM51V17400 be4s A10E M51V m51v174 HAT141
Text: O K I Semiconductor MSM5 1 V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the V17400 is OKI's CMOS silicon gate process technology.
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MSM51V17400
304-Word
MSM51V17400
cycles/32ms
A0-A10
L724240
M51V17400-60
M51V17400
M51V17
be4s
A10E
M51V
m51v174
HAT141
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSis M 5 M 4 V 1 7 4 0 0 C J ,T P - 5 ,-6 ,-7 ,- 5 S ,- 6 S ,- 7 S _FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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16777216-BIT
4194304-WQRD
4194304-word
M5M4V17400CJ
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 VI 7400 B/BSL E2G0069-17-41 4,194,304-Word x 4-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTIO N The V17400B/BSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V17400B / BSL achieves high integration, high-speed operation, and
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MSM51
304-Word
E2G0069-17-41
MSM51V17400B/BSL
MSM51V17400B
TheMSM51
V17400B/BSL
26/24-pin
or26/24-pin
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT. E A S ll^ V17400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V17400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V17400B features a “fast page” mode of operation whereby high
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MB81V17400B-50/-60/-50L/-60L
MB81V17400B
F9712
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 7 4 0 0 C J ,T P - 5 ,- 6 ,-7 , « iM iN A R * P1' " '\HiS läB ‘ . t _ j ìvv^-*^ v Son P - V . w 5 S, - 6 S, - 7 S - FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs,
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16777216-BIT
4194304-WORD
M5M4V17400CJ
4194304-WQRD
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N42C
Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A
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N41256A
1256A
N41257A-08
256/4ms
6-P-0300A
QFJ018-P-R290
ZIP016-P-0300
DIP016-P-0300A
N42C
N41C
MN41256a
N4146
4141-00
41410
TSOP044-P0400A
N4141
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26-P3
Abstract: No abstract text available
Text: V ' T S V B ’ S '- ” ,tu n i* * * * M 5 M 4 V 1 7 4 0 0 B J J P .R ,R tL ' T S ,- ’. 3 1 s 7 ,-lî, - 6 S ,- Ï'S ,- « S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily o f 4 1 9 4 3 0 4 -w o rd b y 4 -b it d yn a m ic R AM s,
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16777216-BIT
4194304-WORD
26-P3
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Untitled
Abstract: No abstract text available
Text: » « Y U H P fll « V17400C,HY51V16400C 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind o! page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400C
HY51V16400C
A0-A11)
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT FAST PAGg MOD E DYNAMIC RAM M 7400A-60/-70/-60L/" CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V17400A is a fully decoded CMOS Dynamic RAM DRAM t e t contains 16,777,216 memory cells accessible in 4-bit increments. The V17400A features a “fast page” m od^of operation whereby high
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400A-60/-70/-60L/"
MB81V17400A
F9708
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