Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs ARY N I M I L PRE tion. pecifica to change. final s t is not a its are subjec is Th Notice: ametric lim ar p e Som M5M4V17400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN DESCRIPTION
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M5M4V17400CJ
16777216-BIT
4194304-WORD
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MH16V72ATJ5
Abstract: MH8V6445AWZJ-6
Text: • 168 pin 8 BYTE-BUFFERED DIMM Continued Memory capacity 1152M Power supply voltage Sit Configuration {Word X Bit) Load 1C Contact W x H X D (rm ) Platine 133.35X38.1 X4.6 M5M465400ATPxl8 133.35X38.1X4.6 M5M467405ATPx18 133.35X38.1 X4.6 Access Both sides
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M5M467400ATPx18
M5M465400ATPxl8
1152M
16Mx72
M5M467405ATPx18
M5M465405ATPx
M5M467400AJx36
2304M
32Mx72
M5M467405AJx36
MH16V72ATJ5
MH8V6445AWZJ-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSis M 5 M 4 V 1 7 4 0 0 C J ,T P - 5 ,-6 ,-7 ,- 5 S ,- 6 S ,- 7 S _FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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16777216-BIT
4194304-WQRD
4194304-word
M5M4V17400CJ
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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MH2M645CZPJ-6
Abstract: M5M418165 MH2M645CXPJ-6
Text: • 168 pin 8 BYTE-BUFFERED DIMM Memory capacity TBit] Bit Configuration {W ord* a t Power supply voltage 64M 1Mx64 5 V ± 10% lo ad 1C Pacíase Outward dimensions outline W X H X D jm m ) Contact Ac c m s tfrtw Platina ’ M5M418160CJx4 60 133.35X25.4X8.6
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35X25
M5M418165CJx4
M5M44400CTPx18
M5M418160CJx4
1Mx64
1M64CXPJ-6
1M64CXP
MHIM645CXPJ-6
1M645CXPJ-7
MHIM72CTJ-6
MH2M645CZPJ-6
M5M418165
MH2M645CXPJ-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 7 4 0 0 C J ,T P - 5 ,- 6 ,-7 , « iM iN A R * P1' " '\HiS läB ‘ . t _ j ìvv^-*^ v Son P - V . w 5 S, - 6 S, - 7 S - FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs,
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16777216-BIT
4194304-WORD
M5M4V17400CJ
4194304-WQRD
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yx 5103
Abstract: ic 5101 ram m5m4v17400
Text: MITSUBISHI LSlS . u h n a * * p R E U M 5 M 4 V 1 7 4 0 0 C J ,T P - 5 , - 6 ,- 7 , - 5 S .- 6 S . - 7 S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BÍT DYNAMIC RAM DESCRIPTION This is a family o1 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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16777216-BIT
4194304-WORD
VCC7216-BIT
4194304-WQRD
M5M4V17400C
yx 5103
ic 5101 ram
m5m4v17400
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M5M4V17805CTP-6
Abstract: M5M4V17805CTP M5M4VI7405CTP-6 M5M4V17805CTP-7 M5M4V17800CTP-7 M5M4V17800CTP7 M5M4V17805CJ6 M5M4V16400CTP-6 M5M4V17400CTP7 M5M4V18165
Text: # 16M -Bit Dynamic RAMs low voltage operation Voo = 3 ,3 ±0.3V Memory Configuration Memory capacity Typ. Maxaccess power time issipatioF Function mode w ima 60 270 70 225 60 270 Self Refresh ( — * S) 70 225 Fast Page 60 360 Self Refresh (—* Si 70 315
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M5M4V16400CJ-6
M5M4V16400CTP-6
M5M4V16400CJ-7
M5M4V1640OCTP-7
MSM4V16405CJ-6
M5M4V16405CTP-6
MSM4V16405CJ-7
M5M4V16405CTP-7
M5M4V17400CJ-6
M5M4V17400CTP-6
M5M4V17805CTP-6
M5M4V17805CTP
M5M4VI7405CTP-6
M5M4V17805CTP-7
M5M4V17800CTP-7
M5M4V17800CTP7
M5M4V17805CJ6
M5M4V17400CTP7
M5M4V18165
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