mrs marking
Abstract: UtRAM Density marking code PAR
Text: UtRAM Code Information 1/2 Last Updated : August 2009 K1XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) * PAR : Partial Refresh * DPD : Deep Power Down * MRS : Mode Register Set 2. UtRAM : 1 3. Small Classification B : UtRAM (Sync, Burst Type)
|
Original
|
100ns
mrs marking
UtRAM Density
marking code PAR
|
PDF
|
SAMSUNG MCP
Abstract: MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm
Text: Preliminary MCP MEMORY KBC00A6A0M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
|
Original
|
KBC00A6A0M
8Mx16)
4Mx16)
2Mx16)
512Kx16)
87-Ball
80x12
SAMSUNG MCP
MCP Electronics
128M NAND Flash Memory
MCP NAND
MCP MEMORY
4MX16* sram
UtRAM Density
NAND FLASH SAMSUNG
M/BVS mcp ohm
|
PDF
|
SAMSUNG MCP
Abstract: MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp
Text: Preliminary MCP MEMORY KAJ000A30M Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 12, 2003 Preliminary 0.1 Revised
|
Original
|
KAJ000A30M
4Mx16)
512Kx16)
111-Ball
SAMSUNG MCP
MCP Electronics
MCP MEMORY
Multi-Chip Package MEMORY
UtRAM Density
nand sdram mcp
|
PDF
|
SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
|
Original
|
KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
|
PDF
|
SAMSUNG MCP
Abstract: MCP NAND SAMSUNG MCp nand UtRAM Density
Text: Preliminary MCP MEMORY K5Q5764G0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - 256Mb NAND C-Die_Ver 2.6 - 64Mb UtRAM B-Die(Burst)_Ver 0.4
|
Original
|
K5Q5764G0M
16Mx16)
4Mx16)
256Mb
111-Ball
SAMSUNG MCP
MCP NAND
SAMSUNG MCp nand
UtRAM Density
|
PDF
|
BA100 diode
Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)
|
Original
|
KADxx0300B
2Mx16)
69-Ball
10MAX
BA100 diode
BA115
BA116
BA961
SAMSUNG MCP
ba841
ba7 transistor
BA124
BA127
BA133 diode
|
PDF
|
micron vccp
Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAMâ„¢ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring
|
Original
|
TN-45-13:
09005aef8201fbdc
TN4513
09005aef8201fb90/Source:
micron vccp
TN-45-13
UtRAM Density
micron 128MB NOR FLASH
K1B2816
|
PDF
|
SAMSUNG MCP
Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF
|
Original
|
KAE00C400M
16Mx8)
4Mx16)
111-Ball
SAMSUNG MCP
samsung toggle mode NAND
NAND FLASH SAMSUNG
toggle mode nand samsung
nand sdram mcp
KAE00C400M
UtRAM Density
MCP NAND, DRAM, NOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K1B2816BBA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BBA
128Mb
|
PDF
|
transistor d261
Abstract: D255
Text: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B5616BBM
256Mb
transistor d261
D255
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B3216B8E 32Mb 2M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B3216B8E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K1B6416B8D UtRAM 64Mb 4M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B6416B8D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B1616BDB 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B1616BDB
|
PDF
|
K1B2816
Abstract: No abstract text available
Text: Preliminary UtRAM K1B2816BBA 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BBA
128Mb
K1B2816
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: K1B6416B2D UtRAM 64Mb 4M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B6416B2D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B2816BAA 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BAA
128Mb
|
PDF
|
K1B2816
Abstract: No abstract text available
Text: K1B2816BAA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BAA
128Mb
K1B2816
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B1616B8B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B1616B8B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B1616B2B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B3216BDE 32Mb 2M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B3216BDE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K1B2816BFA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BFA
128Mb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K1B2816BBA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B2816BBA
128Mb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B5616BAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B5616BAM
256Mb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
|
Original
|
K1B5616BBM
256Mb
|
PDF
|