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    UT62L12816 Search Results

    UT62L12816 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT62L12816 Utron Technology 128K x 16 BIT LOW POWER CMOS SRAM Original PDF
    UT62L12816 Utron Technology 128K x 16 BIT LOW POWER CMOS SRAM Original PDF
    UT62L12816-100 Utron Technology 128K x 16 BIT LOW POWER CMOS SRAM Original PDF
    UT62L12816-55 Utron Technology 128K x 16 BIT LOW POWER CMOS SRAM Original PDF
    UT62L12816-70 Utron Technology 128K x 16 BIT LOW POWER CMOS SRAM Original PDF
    UT62L12816BS-100L Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-100LE Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-100LI Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-100LL Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-100LLE Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-100LLI Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-55L Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-55L Utron Technology Access time: 55 ns, 128 K x 8 Bit low power CMOS SRAM Original PDF
    UT62L12816BS-55LE Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-55LE Utron Technology Access time: 55 ns, 128 K x 8 Bit low power CMOS SRAM Original PDF
    UT62L12816BS-55LI Utron Technology Access time: 55 ns, 128 K x 16 Bit low power CMOS SRAM Original PDF
    UT62L12816BS-55LI Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-55LL Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF
    UT62L12816BS-55LL Utron Technology Access time: 55 ns, 128 K x 8 Bit low power CMOS SRAM Original PDF
    UT62L12816BS-55LLE Utron Technology 128k x 16 Bit Low Power CMOS SRAM Original PDF

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    VDR 0047

    Abstract: UT62L12816 UT62L12816M
    Text:  UTRON UT62L12816 I 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY REVISION Preliminary Rev. 0.5 Preliminary Rev. 0.6 Preliminary Rev. 0.7 Rev. 1.0 Rev. 1.1 DESCRIPTION Original. 1. The symbols CE# and OE# and WE# are revised as. CE and OE and WE .


    Original     		PDF UT62L12816 70/100ns 20/3uA 80/10uA 35/30/25mA P80049 VDR 0047 UT62L12816M

    UT62L12816

    Abstract: UT62L12816M
    Text:  UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION The UT62L12816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. Fast access time : 55ns max for Vcc=3.0V~3.6V


    Original     		PDF UT62L12816 UT62L12816 152-bit 70/100ns 45/35/25mA I/O16) 44-pin 400mil 48-pin P80050 UT62L12816M

    VDR 0047

    Abstract: UT62L12816 tfbga
    Text:  UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 REVISION HISTORY REVISION Preliminary Rev. 0.5 DESCRIPTION 1. Original. Released Date Mar, 2001 1. The symbols CE# and OE# and WE# are revised as. CE and Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4


    Original     		PDF UT62L12816 70/100ns UT62L12816BSL-55LE UT62L12816BSL-55LLE UT62L12816BSL-70LE UT62L12816BSL-70LLE UT62L12816BSL-100LE UT62L12816BSL-100LLE P80050 VDR 0047 UT62L12816 tfbga

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260