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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side


    Original     		UT4232 UT4232 UT4232G-S08-R QW-R502-337 PDF

    mosfet 337

    Abstract: c 337 25 337 diode
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side


    Original     		UT4232 UT4232 UT4232G-S08-R QW-R502-337 mosfet 337 c 337 25 337 diode PDF