UT3414L Search Results
UT3414L Datasheets Context Search
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a |
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UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R QW-R502-248 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in |
Original |
UT3414 UT3414 UT3414L-AE3-R UT3414G-AE3-R OT-23 QW-R502-248 | |
32A marking sot-23Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a |
Original |
UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R UT3414L-AE3-R UT3414G-AE3-R QW-R502-248 32A marking sot-23 | |
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Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3414 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in |
Original |
UT3414 UT3414 UT3414L-AE3-R UT3414G-AE3-R OT-23 QW-R502-248 |