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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.


    Original
    PDF UT3413 UT3413 UT3413L UT3413-AE3-R UT3413L-AE3-R OT-23 QW-R502-159

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT3413 UT3413 UT3413G-AE2-R UT3413G-AE3-R OT-23-3 OT-23 QW-R502-159

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT3413 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT3413 UT3413 UT3413L-AE2-R UT3413G-AE2-R UT3413L-AE3-R UT3413G-AE3-R OT-23-3 OT-23 QW-R502-159

    marking 34P sot 23

    Abstract: marking 34P marking 34P sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT3413 UT3413 UT3413L-AE3-R UT3413G-AE3-R OT-23 QW-R502-159 marking 34P sot 23 marking 34P marking 34P sot23

    marking 34P sot 23

    Abstract: marking 34P sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT3413 UT3413 UT3413L-AE2-R UT3413G-AE2-R UT3413L-AE3-R UT3413G-AE3-R OT-23-3 OT-23 QW-R502-159 marking 34P sot 23 marking 34P sot23

    2.5V "Power MOSFET"

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.


    Original
    PDF UT3413 UT3413 UT3413L UT3413G UT3413-AE3-R UT3413L-AE3-R UT3413G-AE3-R OT-23 QW-R502-159 2.5V "Power MOSFET"