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    US1M VISHAY Search Results

    US1M VISHAY Result Highlights (3)

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    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation

    US1M VISHAY Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time


    Original     		PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time


    Original     		PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 GENERAL SEMICONDUCTOR MARKING UJ SMA vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 03-Jul-06 GENERAL SEMICONDUCTOR MARKING UJ SMA US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: JESD22-B102D J-STD-002B
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 08-Apr-05 GENERAL SEMICONDUCTOR MARKING uj sma JESD22-B102D J-STD-002B

    US1A

    Abstract: No abstract text available
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 US1A

    Untitled

    Abstract: No abstract text available
    Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    general semiconductor diode marking ug

    Abstract: No abstract text available
    Text: US1A-M3, US1B-M3, US1D-M3, US1G-M3, US1J-M3, US1K-M3, US1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 general semiconductor diode marking ug

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: us1jhe3 us1m datasheet vishay MARKING UM SMA JESD22-B102D J-STD-002B US1A
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 08-Apr-05 GENERAL SEMICONDUCTOR MARKING UJ SMA us1jhe3 us1m datasheet vishay MARKING UM SMA JESD22-B102D J-STD-002B US1A

    JESD22-B102

    Abstract: J-STD-002 US1M
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 11-Mar-11 JESD22-B102 J-STD-002 US1M

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: US1A
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 GENERAL SEMICONDUCTOR MARKING uj sma US1A

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC GENERAL SEMICONDUCTOR MARKING UJ SMA us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um

    Untitled

    Abstract: No abstract text available
    Text: US1A thru US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, AEC-Q101 DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: US1A thru US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, AEC-Q101 DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 02-Jul-02

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 20-Mar-03 GENERAL SEMICONDUCTOR MARKING UJ SMA GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: RECTIFIER marking UG 08 us1d US1A
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


    Original     		PDF DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 50mVp-p 05-Aug-05 GENERAL SEMICONDUCTOR MARKING UJ SMA RECTIFIER marking UG 08 us1d US1A

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D J-STD-002B
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


    Original     		PDF DO-214AC UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 GENERAL SEMICONDUCTOR MARKING UJ SMA vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 50mVp-p 18-Feb-04 GENERAL SEMICONDUCTOR MARKING uj sma GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM

    US1A-US1M

    Abstract: us1m vishay US1M Lite US1G diode DIODE US1J us1m diode us1j diode
    Text: US1A–US1M Vishay Lite–On Power Semiconductor 1.0A Surface Mount Ultra–Fast Rectifier Features D D D D Glass passivated die construction Diffused junction Ultra–fast recovery time for high efficiency Low forward voltage drop, high current capability, and low power loss


    Original     		PDF D-74025 24-Jun-98 US1A-US1M us1m vishay US1M Lite US1G diode DIODE US1J us1m diode us1j diode

    Untitled

    Abstract: No abstract text available
    Text: US1A-US1M Vishay Lite-On Power Semiconductor 1.0A Surface Mount Ultra-Fast Rectifier Features • G lass passivated die construction • Diffused junction • U ltra -fa s t recovery tim e fo r high efficiency • Low forw ard voltage drop, high current capability, and low pow er loss


    OCR Scan     		PDF D-74025 24-Jun-98

    MARKING FZ

    Abstract: US1A-US1M
    Text: U S 1A -U S 1M VISHAY 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss


    OCR Scan     		PDF MIL-STD-202, DS16008 MARKING FZ US1A-US1M