US1M spice
Abstract: US1x
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability
|
Original
|
PDF
|
J-STD-020C
MIL-STD-202,
DS16008
US1M spice
US1x
|
US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
|
Original
|
PDF
|
MIL-STD-202,
DS16008
US1M spice
|
US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
|
Original
|
PDF
|
MIL-STD-202,
DS16008
US1M spice
|
US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
|
Original
|
PDF
|
MIL-STD-202,
DS16008
US1M spice
|
Untitled
Abstract: No abstract text available
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
|
Original
|
PDF
|
J-STD-020C
DS16008
|
US1J
Abstract: US1A
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
|
Original
|
PDF
|
J-STD-020C
DS16008
US1J
US1A
|
US1M MARKING CODE
Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
|
Original
|
PDF
|
J-STD-020C
DS16008
US1M MARKING CODE
US1M spice
marking c y
US1D
US1J
US1A-13
marking us1m
|
GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
18-Jul-08
GENERAL SEMICONDUCTOR MARKING UJ SMA
vishay MARKING UM SMA
US1M MARKING CODE
us1m vishay
JESD22-B102
J-STD-002
us1g vishay
RECTIFIER marking UG 08
marking us1j Vishay
|
Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
|
Original
|
PDF
|
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
|
Original
|
PDF
|
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
SMD HF8
Abstract: No abstract text available
Text: US1A thru US1M Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratories * * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching
|
Original
|
PDF
|
DO-214AC,
SMD HF8
|
US1A
Abstract: No abstract text available
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
US1A
|
Untitled
Abstract: No abstract text available
Text: US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief
|
Original
|
PDF
|
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
D1405051
|
GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
03-Jul-06
GENERAL SEMICONDUCTOR MARKING UJ SMA
US1J-E3/5AT
us1m datasheet
us1m vishay
GENERAL SEMICONDUCTOR MARKING UM
US1J-E3/61T
JESD22-B102D
J-STD-002B
us1g vishay
RECTIFIER marking UG 08
|
|
Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
11-Mar-11
|
DIODE US1J
Abstract: US1K-T3
Text: US1A – US1K WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak
|
Original
|
PDF
|
SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
DIODE US1J
US1K-T3
|
US1A-US1M
Abstract: US1A.US1M US1A us1j diode us1j bl galaxy
Text: BL GALAXY ELECTRICAL US1A-US1M REVERSE VOLTAGE: 50 - 1000 V FORWARD CURRENT: 1.0 A SURFACE MOUNT RECTIFIER FEATURES DO-214AC SMA ◇ Plastic package has underwriters laboratories vvvvvflam mability classification 94V-0 ◇ For surface mount applications
|
Original
|
PDF
|
DO-214AC
oC/10
US1A-US1M
US1A.US1M
US1A
us1j diode
us1j bl galaxy
|
Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
|
Original
|
PDF
|
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss
|
Original
|
PDF
|
SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
|
us1m diode
Abstract: do-214ac footprint marking of US1J diode US1K-T3
Text: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss
|
Original
|
PDF
|
SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
us1m diode
do-214ac footprint
marking of US1J diode
US1K-T3
|
marking UD
Abstract: US1M
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT US1A THRU US1M SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-214AC 0.065 1.65 ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
|
Original
|
PDF
|
DO-214AC
50mVp-p
marking UD
US1M
|
Untitled
Abstract: No abstract text available
Text: US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Features Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place
|
Original
|
PDF
|
SMA/DO-214AC
MIL-STD-750,
|
US1M MARKING CODE
Abstract: marking us1m us1m
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Ideally Suited for Automated Assembly B
|
Original
|
PDF
|
J-STD-020C
DS16008
US1M MARKING CODE
marking us1m
us1m
|