cx1100-004
Abstract: CX1190 CX1020 CX1100-0920 CX1000 CX10000111 CX1020-0120 CX1100-0900 BK3100 cx 2030 embedded pc
Text: Dokumentation zu den USV - Modulen des CX10x0-Systems CX1100-0900 550 mA / 20 As CX1100-0910 (1,1 A / 20 As) CX1100-0920 (1,1 A / 40 As) Version:1.2 Datum:16.01.2007 Inhaltsverzeichnis Inhaltsverzeichnis CX1100-09xx, USV für die CX10x0-Systeme 1. Vorwort
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CX10x0-Systems
CX1100-0900
CX1100-0910
CX1100-0920
CX1100-09xx,
CX10x0-Systeme
cx1100-004
CX1190
CX1020
CX1100-0920
CX1000
CX10000111
CX1020-0120
CX1100-0900
BK3100
cx 2030 embedded pc
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600va ups circuit diagrams
Abstract: toshiba ddcb3a schematic diagram online UPS schematic diagram UPS 600va UPS 600va circuit diagram matrix 1000 w ups schematic diagram UPS 600va MDM 6200 ses 554 ups 600va circuit diagrams
Text: Authorized Information Technology Schedule Price List FSC Group 70 General Purpose Commercial Information Technology Equipment, Software and Services Digital Telephone, IVR and Voice Messaging Systems FSC Classes 7042 Mini and Micro Computer Control Devices
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GS-35-F-0099L
600va ups circuit diagrams
toshiba ddcb3a
schematic diagram online UPS
schematic diagram UPS 600va
UPS 600va circuit diagram
matrix 1000 w ups schematic diagram
UPS 600va
MDM 6200
ses 554
ups 600va circuit diagrams
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Untitled
Abstract: No abstract text available
Text: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals
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440/250VAC
2000VAC
1900VDC
connector76185
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1550S
Abstract: FMRP-202 SCSI 68PIN FMV-CBL832 GP5-414 DCBL-RPB04 fujitsu vl 1550s GP518 FMV-CBL606 FMFX-511
Text: システム構成図 ※OSにより接続可能装置は異なります。詳細はハードウェア一覧を参照願います。 T：カスタムメイド対象製品を示す。 PRIMERGY ディスプレイ／キーボード／マウス PRIMERGY デスクサイドタイプ ラックマウント構成の場合は,P51を参照下さい
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CRT-17
FMVDP9714
GP5-41110
GP5-SB101132
FMVDP9710A
CRT-15
FMV-DP849
VL-1550S
FMV-KB322
1550S
FMRP-202
SCSI 68PIN
FMV-CBL832
GP5-414
DCBL-RPB04
fujitsu vl 1550s
GP518
FMV-CBL606
FMFX-511
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Untitled
Abstract: No abstract text available
Text: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals
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Original
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PDF
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440/250VAC
2000VAC
1900VDC
connector76185
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Untitled
Abstract: No abstract text available
Text: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals
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PDF
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440/250VAC
2000VAC
1900VDC
connector76185
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UPS es 550
Abstract: SKM300GB123D
Text: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600
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300GB123D
300GB123D
300GAL123D
300GAR123D
UPS es 550
SKM300GB123D
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Untitled
Abstract: No abstract text available
Text: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s
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9N140
9N160
D-68623
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Untitled
Abstract: No abstract text available
Text: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous
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80N60A
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ge traction motor
Abstract: No abstract text available
Text: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module
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GP500LSS06S
DS4324
GP500LSS06S
ge traction motor
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RGE 17-18
Abstract: TO220-4 weight
Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i
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15N120C
O-220
O-263
RGE 17-18
TO220-4 weight
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10N100
Abstract: No abstract text available
Text: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs
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IXGH10N100
IXGH10N100A
O-247
10N100A
10N100A
10N100
10N100U1
10N100AU1
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Untitled
Abstract: No abstract text available
Text: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il
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N100A
25N100
25N1OOA
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75n120
Abstract: No abstract text available
Text: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ
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75N120
OT-227
E153432
D-68623
75n120
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Untitled
Abstract: No abstract text available
Text: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM
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35N100A
4bfib22t.
4bflb22b
00D3712
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ge motor 752
Abstract: 60N60 IXGH60N60 60n60 igbt
Text: H Î Y Y ^JL sIk»!? flH V w A Ultra-Low VCE sat IGBT IXGH/IXGK/IXGT 60N60 V CES I 600 V 75 A 1.6 V C25 V CE(sat) Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 MQ 600 V
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60N60
O-247
O-264
O-268
60N60
ge motor 752
IXGH60N60
60n60 igbt
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Untitled
Abstract: No abstract text available
Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90
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P12N100AU1
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60-05A
Abstract: 60-06A DSEI60 JJS1200 p-to 247 c107w PS1000
Text: 4bflb22b DOGlbBb 50b * I X Y nixYS DSEI 60 U Fast Recovery Epitaxial Diode v v HR* V V 440 540 640 400 500 600 Type DSEI 60-04A DSEI 60-05A DSEI 60-06A * Maximum ratings Symbol Test conditions imun 1«« 1 Tw = T VJU Tc = 70°C; rectangular, 6 = 0.5 < 1 0 us; rep. rating, pulse width limited by TVJU
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4bflb22fc.
DSEI60
0-04A
0-05A
0-06A
O-247
/JJS1200
60-05A
60-06A
JJS1200
p-to 247
c107w
PS1000
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e signed fo r use in sw itching app lica tions. Each m odule consists of six IGBTs in a three phase bridge con figuration, w ith each tra n sisto r hav
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CM150TF-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES C M 1 5 0 T F - 1 2 H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge con figuration, with each transistor hav
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CM150TF-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM200DY-12H
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Untitled
Abstract: No abstract text available
Text: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2
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IXSN51N60AU1
OT-227
VOE-15V.
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FAG 28 diode
Abstract: gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode
Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 -5 .3 March 1998 TYPICAL KEY PARAMETERS 1600V ' c E sa„ 3.3V *C(CONT 300A 'c p k , 600A tr 270ns t. 590ns APPLICATIONS • High Power Switching.
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GP300LSS16S
DS4136
270ns
590ns
FAG 28 diode
gp300lss
INPUT/FAG 28 diode
AN4504
FAG 50 diode
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ixgn60n60
Abstract: No abstract text available
Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous
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60N60
OT-227BminiBLOC
ixgn60n60
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