UPG110B
Abstract: PT 4863 103P UPG100P UPG110 UPG110P 101P
Text: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz 15 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG110B
UPG110P
UPG110B
UPG110
24-Hour
PT 4863
103P
UPG100P
UPG110P
101P
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PT 4863
Abstract: diode gp 421 101P 103P UPG100P UPG110 UPG110B UPG110P
Text: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG110B
UPG110P
UPG110B
UPG110
24-Hour
PT 4863
diode gp 421
101P
103P
UPG100P
UPG110P
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marking 34
Abstract: G110 UPG110B
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. FA 4.5 MAX LEAD 1 & 3 0.6 ± 0.06 3 2 4.6 MAX 4 MARKING 4.1 MIN +0.2 0.7 -0.1 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 PART NUMBER
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UPG110B
24-Hour
marking 34
G110
UPG110B
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: SEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS • W ID E -B A N D : 2 to 8 G H z SYMBOLS PAR AM ETERS Ta = 25 ° g U N IT S R A T IN G S • H IG H G A IN : 15 dB T Y P at f = 2 to 8 G H z V dd Drain Voltage V + 10 • M E D IU M P O W E R : + 14 d B m T Y P @ f = 2 to 8 G H z
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UPG110B
UPG110P
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Untitled
Abstract: No abstract text available
Text: £ lásfl NEC LOW C U R R E N T 2-8 GHz W ID E-B A N D A M P LIF IER UPG110B-L UPG110P-L FEATURES PRELIM IN A R Y A BSO LU TE M A X IM U M RiATINGS Ta = 25°C • LOW CU R R E N T : 60 m A TYP SYM BO LS P A R A M ET ER S UNITS RATINGS V dd V in P in Pt Tc
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UPG110B-L
UPG110P-L
34-6393/FAX
NOTICE-2276
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Untitled
Abstract: No abstract text available
Text: 2-8 GHz WIDE-BAND AMPLIFIER UPG110P GAIN vs. FREQUENCY AND TEMPERATURE FEATURES WIDE-BAND: 2 to 8 GHz HIGH GAIN: 15 dB at f = 2 to 8 GHz MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O œ HERMETICALLY SEALED PACKAGE ASSURES HIGH
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UPG110P
UPG110B
UPG110
UPG110P
UPG100P,
UPG102P
b427S25
DGbb03T
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101P
Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
Text: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l
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UPG110B
UPG110P
101P
103P
UPG100P
UPG110P
ausi die attach
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Untitled
Abstract: No abstract text available
Text: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz
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UPG110B-L
UPG110P-L
UPG110B
UPG100P,
UPG102P
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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TC 4863 DB
Abstract: No abstract text available
Text: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ GAIN vs. FREQUENCY AND TEMPERATURE • W IDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IM PEDANCE MATCHED TO 50 Q
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UPG110B
UPG102P
34-6393/FAX
TC 4863 DB
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Untitled
Abstract: No abstract text available
Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6
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UPG100B
UPG101B
UPG103B
UPG110B
UPG100P
UPG101P
flB08
UPG503B
UPG506B
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Untitled
Abstract: No abstract text available
Text: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ UPGIIOP GAIN vs. FREQUENCY AND TEMPERATURE • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f - 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f - 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O
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UPG110B
UPG110
UPG110P
1000tun
UPG100P,
UPG102P
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L3010
Abstract: UPG110B
Text: 2-8 GHz WIDE-BAND AMPLIFIER ~ p ~ ^ jj“ POWER GAIN vs. FREQUENCY FEATURES_ • WIDE-BAND: 2 to 8 GHz VDO - 8 ' / IDD • 6 0 tiA • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER : +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Si
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UPG110B
UPG11
UPG110P
UPG100P,
UPG102P
L3010
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