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    TE Connectivity

    TE Connectivity UPF25B250RV

    RES 250 OHM 0.1% 1/4W AXIAL
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    DigiKey UPF25B250RV Bag 1,499 1
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    Mouser Electronics UPF25B250RV 422
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    TE Connectivity UPF25B350RV

    RES 350 OHM 0.1% 1/4W AXIAL
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    DigiKey UPF25B350RV Bag 190 1
    • 1 $4.93
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    Mouser Electronics UPF25B350RV 231
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    TE Connectivity UPF25B50RV

    RES 50 OHM 0.1% 1/4W AXIAL
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    DigiKey UPF25B50RV Bag 179 1
    • 1 $4.93
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    Mouser Electronics UPF25B50RV 183
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    Newark UPF25B50RV Bulk 309 1
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    TE Connectivity UPF25B1K0V

    RES 1K OHM 0.1% 1/4W AXIAL
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    DigiKey UPF25B1K0V Bag 93 1
    • 1 $4.93
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    Mouser Electronics UPF25B1K0V 86
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    TE Connectivity UPF25B100RV

    RES 100 OHM 0.1% 1/4W AXIAL
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    DigiKey UPF25B100RV Bag 88 1
    • 1 $4.93
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    Mouser Electronics UPF25B100RV 14
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    Newark UPF25B100RV Bulk 115 1
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    UPF2 Datasheets (42)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    UPF200-AA Universal Microelectronics AC/DC POWER SUPPLY SEXET OUT 12V 21A 200W Original PDF
    UPF2010 Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2010 Cree Ldmos Fets in Class ab Operation 1800 MHZ Cellular Original PDF
    UPF2010-178 Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010F Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2010F Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010P Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010P Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2012 Cree Ldmos Fets in Class ab Operation 1800 MHZ Cellular Original PDF
    UPF20120 Cree 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2012-178 Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2012F Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2012P Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2030 Cree 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2030 Cree 30W 2GHz 26V Broadband RF Power N-channel Enhancement-mode Lateral Dmos Original PDF
    UPF2030 Cree LDMOS FETs in Class AB Operation 1900 MHz Cellular Original PDF
    UPF2030F Cree FET Transistor, 30W, 2GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2030P Cree FET Transistor, 30W, 2GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2050 Cree 50W PEP, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2060 Cree 60W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF

    UPF2 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    J64-1

    Abstract: UPF20120 ultrarf J296 J6-41 J641
    Text: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum


    Original     		UPF20120 30dBc J64-1 UPF20120 ultrarf J296 J6-41 J641 PDF

    J406

    Abstract: J248 J425 ultrarf UPF2245 J242
    Text: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original     		UPF2245 30dBc J406 J248 J425 ultrarf UPF2245 J242 PDF

    diode C531

    Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
    Text: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier


    Original     		UPF21060 MRF21060 diode C531 c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217 PDF

    UPF200-AA

    Abstract: power supply 12v 10a input 230v ac UMEC CISPR22 IEC1000-3-2 POWER SUPPLY 220V AC TO 12v 359006 UMEC upf200-aa CISPR-22 50/UMEC upf200-aa
    Text: UPF200-AA 200W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:


    Original     		UPF200-AA IEC1000-3-2 CISPR22 AC90V IEC1000-3-2 100mm 190mm UPF200-AA power supply 12v 10a input 230v ac UMEC POWER SUPPLY 220V AC TO 12v 359006 UMEC upf200-aa CISPR-22 50/UMEC upf200-aa PDF

    UPF2030

    Abstract: ultrarf
    Text: URFDB Sec 09_2030 11/3/99 11:09 AM Page 9-1 UPF2030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA,


    Original     		UPF2030 30dBc 225mA UPF2030 ultrarf PDF

    UPF2010F

    Abstract: ultrarf UPF2010 UPF2010P
    Text: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		UPF2010 30dBc UPF2010F UPF2010P UPF2010F ultrarf UPF2010 UPF2010P PDF

    F1840

    Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF2012 30dBc UPF2012F UPF2012P UPF2012 F1840 Cree Microwave cree rf UPF2012-178 UPF2012F UPF2012P package type 440109 PDF

    UPF250-AA

    Abstract: POWER SUPPLY 220V AC TO 12v UMEC CISPR22 IEC1000-3-2 12V to 220v ac 5A
    Text: UPF250-AA 250W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:


    Original     		UPF250-AA IEC1000-3-2 CISPR22 IEC1000-3-2 100mm 205mm UPF250-AA POWER SUPPLY 220V AC TO 12v UMEC 12V to 220v ac 5A PDF

    ultrarf

    Abstract: 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022
    Text: UPF21090 90W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original     		UPF21090 MRF21090 ultrarf 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022 PDF

    J377

    Abstract: J380 J373 J207 ultrarf UPF2425 J362 J2-21 J209 J369
    Text: URFDB Sec 15_2425 11/3/99 11:27 AM Page 15-1 UPF2425 25W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,


    Original     		UPF2425 30dBc J377 J380 J373 J207 ultrarf UPF2425 J362 J2-21 J209 J369 PDF

    UPF2010

    Abstract: 1103AM package type 440109
    Text: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,


    Original     		UPF2010 30dBc UPF2010 1103AM package type 440109 PDF

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF2012 30dBc UPF2012F UPF2012P 44017r UPF2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF2012 30dBc UPF2012F UPF2012P UPF2012 UPF2012F UPF2012P PDF

    UPF2010-178

    Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
    Text: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF2010 30dBc UPF2010F UPF2010P UPF20AP 100UF 125MW, UPF2010 UPF2010F UPF2010-178 Cree Microwave upf2010 AC DC 10w 47PF UPF2010P J033 package type 440109 PDF

    UPF2030F

    Abstract: Cree Microwave cree rf UPF2030 UPF2030P
    Text: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier


    Original     		UPF2030 30dBc UPF2030F UPF2030P UPF2030 UPF2030F Cree Microwave cree rf UPF2030P PDF

    J457

    Abstract: J463 ultrarf UPF2445 j149 J476 164TM f2390 j142 J147
    Text: URFDB Sec 16_2445 11/3/99 11:29 AM Page 16-1 UPF2445 45W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original     		UPF2445 30dBc J457 J463 ultrarf UPF2445 j149 J476 164TM f2390 j142 J147 PDF

    UPF2030F

    Abstract: UPF2030 UPF2030P
    Text: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier


    Original     		UPF2030 30dBc UPF2030F UPF2030P UPF2030 UPF2030F UPF2030P PDF

    ultrarf

    Abstract: UPF2060 J351 118 gpe
    Text: URFDB Sec 11_2060 11/3/99 11:17 AM Page 11-1 UPF2060 60W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS 11 Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,


    Original     		UPF2060 28dBc Volta830 ultrarf UPF2060 J351 118 gpe PDF

    J243

    Abstract: j182 J464 ultrarf UPF2050 j453 j247
    Text: URFDB Sec 10_2050 11/3/99 11:13 AM Page 10-1 UPF2050 50W PEP, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum peak envelope output power of 50W, it is ideal for


    Original     		UPF2050 30dBc J243 j182 J464 ultrarf UPF2050 j453 j247 PDF

    J427

    Abstract: ultrarf UPF2225 J437 J417
    Text: URFDB Sec 13_2225 11/3/99 11:21 AM Page 13-1 UPF2225 25W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,


    Original     		UPF2225 30dBc J427 ultrarf UPF2225 J437 J417 PDF

    MRF21030

    Abstract: UPF21030
    Text: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		UPF21030 MRF21030 MRF21030 UPF21030 PDF

    HP4432B

    Abstract: UPF21010
    Text: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers


    Original     		UPF21010 Volt55 HP4432B UPF21010 PDF

    MRF21030

    Abstract: ultrarf UPF21030
    Text: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier


    Original     		UPF21030 MRF21030 100kHz 270mA 270mA, MRF21030 ultrarf UPF21030 PDF

    TA8190

    Abstract: No abstract text available
    Text: T O SH IB A TC9263AF TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC9263AF CD SINGLE-CHIP PROCESSOR The TC9263AF is a single chip processor for sync separation protection/synchronization, EFM dem odulation, error correction / interpolation,


    OCR Scan     		TC9263AF TC9263AF 91F/TA 2035F/TA2065F, FP100-P-1420-0 TA8190 PDF