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    UPF18030 Search Results

    UPF18030 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF18030 Cree 30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF18030 Cree Original PDF
    UPF18030-095 Cree 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    UPF18030-095 Cree FET Transistor, 30W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF18030-095 Cree 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    UPF18030F Cree Original PDF
    UPF18030P Cree Original PDF

    UPF18030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ultrarf

    Abstract: UPF18030 MRF18030
    Text: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF18030 100kHz 270mA 270mA, ultrarf UPF18030 MRF18030

    MRF19030

    Abstract: UPF18030-095
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 UPF18030-095 MRF19030

    MRF19030

    Abstract: UPF18030-095 IS954
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 250mA, UPF18030-095 MRF19030 IS954

    ultrarf

    Abstract: UPF18030
    Text: UPF18030 30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers


    Original     		PDF UPF18030 MRF18030 ultrarf UPF18030

    ultrarf

    Abstract: UPF18030 UPF18030F UPF18030P
    Text: UPF18030 30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers


    Original     		PDF UPF18030 MRF18030 UPF18030F ultrarf UPF18030 UPF18030F UPF18030P

    UPF18030-095

    Abstract: ultrarf 2200PF 470PF 47UF MMBTA64 MRF19030
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers


    Original     		PDF UPF18030-095 MRF19030 UPF18030-095 ultrarf 2200PF 470PF 47UF MMBTA64 MRF19030

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b