Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPD488130L Search Results

    UPD488130L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    uPD488130L NEC Semiconductor Selection Guide 1995 Original PDF

    UPD488130L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    Rambus RDRAM ASIC

    Abstract: RDRAM cross reference NEC RDRAM 36 REF05
    Text: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan     		PDF 16M-BIT 16-Megabit P32Q64SA Rambus RDRAM ASIC RDRAM cross reference NEC RDRAM 36 REF05

    TA51B

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 1 3 0 L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 8 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S ignaling


    OCR Scan     		PDF 16M-BIT P32G6-65A TA51B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 1 6 -M e g a b it Ram bus DRAM RDRAM™ is an e x tre m e ly -h ig h -s p e e d CM OS DRAM o rg a n iz e d as 2M w o rd s by 8 b its and cap a ble o f b u rs tin g up to 256 b yte s o f data at 2 ns per byte. The use o f R am bus S ig n a lin g


    OCR Scan     		PDF PD488130L 16M-BIT P32G6-65A bM27525

    NEC RDRAM 36

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan     		PDF uPD488130L 16M-BIT 16-Megabit P32G6-65A NEC RDRAM 36

    LN-111

    Abstract: wnqb NEC RDRAM 36
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK D e s c rip tio n The 16-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan     		PDF 16M-BIT 16-Megabit LN-111 wnqb NEC RDRAM 36

    REF05

    Abstract: No abstract text available
    Text: PRELIMINARY bATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan     		PDF uPD488130L 16M-BIT 16-Megabit P32G645A REF05