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    UPD44165084 Search Results

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    UPD44165084 Price and Stock

    Rochester Electronics LLC UPD44165084BF5-E40-EQ3

    QDR SRAM, 2MX8, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD44165084BF5-E40-EQ3 Bulk 4,827 8
    • 1 -
    • 10 $40.27
    • 100 $40.27
    • 1000 $40.27
    • 10000 $40.27
    		Buy Now

    Renesas Electronics Corporation UPD44165084BF5-E40-EQ3

    - Bulk (Alt: UPD44165084BF5-E40)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas UPD44165084BF5-E40-EQ3 Bulk 4 Weeks 9
    • 1 $40.66
    • 10 $40.66
    • 100 $36.4
    • 1000 $32.91
    • 10000 $32.91
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    Rochester Electronics UPD44165084BF5-E40-EQ3 4,827 1
    • 1 $40.66
    • 10 $40.66
    • 100 $38.22
    • 1000 $34.56
    • 10000 $34.56
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    UPD44165084 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPD44165084 NEC (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-Word BURST OPERATION Original PDF
    uPD44165084F5-E30-EQ1 NEC 18M-BIT QDR II SRAM 4-Word BURST OPERATION Original PDF
    uPD44165084F5-E33-EQ1 NEC 18M-BIT QDR II SRAM 4-Word BURST OPERATION Original PDF
    UPD44165084F5-E40-EQ1 NEC 18M-bit(2M-word x 8-bit) QDR II SRAM Original PDF
    UPD44165084F5-E50-EQ1 NEC 18M-bit(1M-word x 18-bit) QDR II SRAM Original PDF
    uPD44165084F5-E50-EQ1 NEC 18 MBit QDRII SRAM 4 Word Burst Operation Original PDF
    UPD44165084F5-E60-EQ1 NEC 18M-bit(512K-word x 36-bit) QDR II SRAM Original PDF
    uPD44165084F5-E60-EQ1 NEC 18 MBit QDRII SRAM 4 Word Burst Operation Original PDF
    uPD44165084Fx-E33-EQx NEC 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-Word BURST OPERATION Original PDF
    uPD44165084Fx-E50-EQx NEC 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-Word BURST OPERATION Original PDF
    uPD44165084Fx-E60-EQx NEC 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-Word BURST OPERATION Original PDF

    UPD44165084 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the


    Original     		PDF PD44165084B-A PD44165094B-A PD44165184B-A PD44165364B-A 18M-BIT R10DS0018EJ0100 PD44165084B-A 152-word PD44165094B-A

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M8E0904E

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    AM 5888

    Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
    Text: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is


    Original     		PDF M16000EJEV0SG00 AM 5888 SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442

    BGA15

    Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
    Text: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘


    Original     		PDF M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44165084B μPD44165094B μPD44165184B μPD44165364B 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0200 Rev.2.00 October 6, 2011 Description The μPD44165084B is a 2,097,152-word by 8-bit, the μPD44165094B is a 2,097,152-word by 9-bit, the


    Original     		PDF PD44165084B PD44165094B PD44165184B PD44165364B 18M-BIT R10DS0018EJ0200 152-word

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44165084A, 44165094A, 44165184A, 44165364A 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The μPD44165084A is a 2,097,152-word by 8-bit, the μPD44165094A is a 2,097,152-word by 9-bit, the μPD44165184A is a 1,048,576-word by 18-bit and the μPD44165364A is a 524,288-word by 36-bit synchronous quad data rate static RAM


    Original     		PDF PD44165084A, 4165094A, 4165184A, 4165364A 18M-BIT PD44165084A 152-word PD44165094A PD44165184A

    uPD44165084

    Abstract: uPD44165084F5-E40-EQ1 uPD44165084F5-E50-EQ1 PD44165364F5-E60-EQ1
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The μPD44165084 is a 2,097,152-word by 8-bit, the μPD44165184 is a 1,048,576-word by 18-bit and the μPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original     		PDF PD44165084, 18M-BIT PD44165084 152-word PD44165184 576-word 18-bit PD44165364 288-word 36-bit uPD44165084 uPD44165084F5-E40-EQ1 uPD44165084F5-E50-EQ1 PD44165364F5-E60-EQ1

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD44165084A-A, 4165094A-A, 4165184A-A, 4165364A-A PD44165084A-A2 PD44165094A-A PD44165184A-A1 PD44165364A-A524 M19870JJ1V0DS

    UPD44164185F5-E60-EQ1

    Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
    Text: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8


    Original     		PDF uPD4382321GF-A85 GS880F32BT-7 uPD4382321GF-A90 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD44164185F5-E60-EQ1 UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0002 Rev.0.02 Aug 18, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the


    Original     		PDF PD44165084B-A PD44165094B-A PD44165184B-A PD44165364B-A 18M-BIT R10DS0018EJ0002 PD44165084B-A 152-word PD44165094B-A

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD44165084A-A, 44165094A-A, 44165184A-A, 44165364A-A 18M ビット QDR II SRAM 4 ワード・バースト・オペレーション μPD44165084A-A（2,097,152 ワ ー ド x 8 ビット）， μPD44165094A-A （ 2,097,152 ワード × 9 ビット），


    Original     		PDF PD44165084A-A, 4165094A-A, 4165184A-A, 4165364A-A PD44165084A-A2 PD44165094A-A PD44165184A-A1 PD44165364A-A524 ns300 ns270

    EF25

    Abstract: semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72
    Text: September 2009 2009.9 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge


    Original     		PDF G0706 M16000EJHV0SG00 EF25 semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72