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    UPD16814GS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPD16814GS NEC MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT Original PDF

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    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


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    PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ;t P D 16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¡PD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as


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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD1 6 8 1 4 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The /¿PD16814GS is a m onolithic dual H bridge driver circuit em ploying a power MOS FET for its driver stage. By com plem enting the P channel and N channel of the output stage, the circuit current is substantially im proved as


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    PDF uPD16814GS