GR-S-010
Abstract: smc d-M9bW SMC D-A93 YG02 LZ 173 relay D-M9B ISO pneumatic standards symbols D-M9P CD-MU03 CQUB20-5
Text: Compact Cylinder Plate type Size: 20, 25, 32, 40 Width: Reduced by up to 40% compared with SMC CQ2 series Total length: Reduced by up to 15% Volume: Reduced by up to 18% Mass: Reduced by up to 36% (compared with SMC MU series with 30 stroke)
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SI-8210
GR-S-010
smc d-M9bW
SMC D-A93
YG02
LZ 173 relay
D-M9B
ISO pneumatic standards symbols
D-M9P
CD-MU03
CQUB20-5
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verilog code of 8 bit comparator
Abstract: vhdl code for 4 channel dma controller pci master verilog code pci schematics pin vga CRT pinout 80C300 1 wire verilog code 16 byte register VERILOG 8 shift register by using D flip-flop design of dma controller using vhdl
Text: QAN15 PCI Master / Target Application Note 1 INTRODUCTION This application note describes a fully PCI-compliant Master/Slave interface, implemented in a single QuickLogic QL24x32B FPGA. It utilizes the PCI burst transfer mode for transfers at high speed, up to 67
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QAN15
QL24x32B
t0C300
verilog code of 8 bit comparator
vhdl code for 4 channel dma controller
pci master verilog code
pci schematics
pin vga CRT pinout
80C300
1 wire verilog code
16 byte register VERILOG
8 shift register by using D flip-flop
design of dma controller using vhdl
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OPA8828
Abstract: No abstract text available
Text: OPA8828 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8828
100mA
--------------------110um
--------------------10mil
OPA8828
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po102
Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
Text: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8831
100mA
--------------------130um
--------------------10mil
po102
700 nm LED bare chip
OPA8831
tf 400
OPA883
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OPA8709
Abstract: 11 NM 65 N
Text: OPA8709 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8709
--------------------150um
OPA8709
11 NM 65 N
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OPA8736H
Abstract: No abstract text available
Text: OPA8736H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8736H
--------------------130um
OPA8736H
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Untitled
Abstract: No abstract text available
Text: OPA8535HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8535HN
Junctio50mA
--------------------130um
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Untitled
Abstract: No abstract text available
Text: OPA8709 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8709
--------------------150um
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Untitled
Abstract: No abstract text available
Text: OPA8530HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8530HN
--------------------110um
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Untitled
Abstract: No abstract text available
Text: OPA8736H Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8736H
--------------------130um
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Untitled
Abstract: No abstract text available
Text: OPA8935HN A Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter
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OPA8935HN
100mA
400ns,
--------------------130um
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po102
Abstract: OPA8935HN
Text: OPA8935HN A Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter
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OPA8935HN
100mA
400ns,
--------------------130um
po102
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Untitled
Abstract: No abstract text available
Text: OPA8950HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8950HN
400ns,
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OPA8731H
Abstract: No abstract text available
Text: OPA8731H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8731H
--------------------150um
OPA8731H
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Untitled
Abstract: No abstract text available
Text: OPA8828 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8828
100mA
--------------------110um
--------------------10mil
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GaAlAs LED CHIP
Abstract: OPA8847
Text: OPA8847 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8847
100mA
--------------------10mil
GaAlAs LED CHIP
OPA8847
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OPA8950HN
Abstract: GaAlAs LED CHIP
Text: OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8950HN
400ns,
OPA8950HN
GaAlAs LED CHIP
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OPA8745H
Abstract: No abstract text available
Text: OPA8745H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8745H
--------------------180um
OPA8745H
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QSC family
Abstract: No abstract text available
Text: In te l 87C196KT/87C196KS ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On*Chip EPROM Up to 1 Kbyte of On-Chip Register RAM Up to 512 Bytes of Additional RAM (Code RAM)
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87C196KT/87C196KS
16-BIT
10-Bit
B7C196Kx
87C196KT/87C196KS
8XC196KT/KS
QSC family
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Untitled
Abstract: No abstract text available
Text: in te i 87C196KT/87C196KS ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On-Chip EPROM High Speed Peripheral Transaction Server (PTS) Up to 1 Kbyte of On-Chip Register RAM
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87C196KT/87C196KS
16-BIT
Channel/10-Bit
/16-Bit
8XC196KT/KS
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up 5135
Abstract: schema UP 5135 UP-5135 panel-meter 5135 up5135 ic7107 LA 7805 IC-7107 panel-meter panel-meter up5135
Text: UP-5135 Digital panelmeter Inkoppling och byte av mätomräde. ver. 06. Strömforsörjning: 5VDC anslutes antingen till stiften : DC 5V eller till stift nr 2 + och 3 (-) i den nedre stiftlisten. Mätingäng: Spänningen som skall mätas anslutes antingen till de högra stiften
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UP-5135
IC7107
up 5135
schema UP 5135
panel-meter 5135
up5135
LA 7805
IC-7107
panel-meter
panel-meter up5135
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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HFBR-1502
Abstract: HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501
Text: SNAP-IN FIBER OPTIC LINKS TRANSMITTERS, RECEIVERS, CABLE AND CONNECTORS HFBR-0500 SERIES Features • GUARANTEED LINK PERFORMANCE OVER TEMPERATURE High Speed Links: dc to 5 MBd Extended Distance Links up to 111 m Low Current Links: 6 mA Peak Supply Current for
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HFBR-160X/2602
HFBR-2602
HFBR-1502
HFBR-2501
3154-RTV
photo interrupter "snap-in" marking 78 connector
HFBR-0500
HFBR-3510
HP photo interrupter module
HFBR-2502
hfbr-2527
HFBR2501
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Untitled
Abstract: No abstract text available
Text: IO Stanford Microdevices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage
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SCA-12
SCA-12
100mA
38dBm.
100mW
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