Untitled
Abstract: No abstract text available
Text: OPA8831 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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PDF
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OPA8831
100mA
--------------------130um
--------------------10mil
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OPA883
Abstract: OPA8830Q
Text: OPA8830Q Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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Original
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PDF
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OPA8830Q
--------------------100um
OPA883
OPA8830Q
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Untitled
Abstract: No abstract text available
Text: OPA8830Q Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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Original
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PDF
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OPA8830Q
--------------------100um
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po102
Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
Text: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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Original
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PDF
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OPA8831
100mA
--------------------130um
--------------------10mil
po102
700 nm LED bare chip
OPA8831
tf 400
OPA883
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