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    UNR5226 Price and Stock

    Panasonic Electronic Components UNR522600L

    TRANS PREBIAS NPN 20V SMINI3
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    UNR522600L Reel 3,000
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    UNR5226 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR5226 Panasonic NPN Transistor with built-in Resistor Original PDF
    UNR5226 Panasonic Silicon NPN Epitaxial Planar Transistor Original PDF
    UNR522600L Panasonic Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 150MW SMINI3 Original PDF

    UNR5226 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package • Code SMini3-G1 • Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te on na


    Original     		PDF 2002/95/EC) UNR5225, UNR5226 UNR5225

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the


    Original     		PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G UNR5226G

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR5226 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.


    Original     		PDF UNR5226

    UNR5226

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR5226 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.


    Original     		PDF UNR5226 UNR5226

    UNR5225

    Abstract: UNR5226
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For muting • Package ■ Features ■ Resistance by Part Number (R1)


    Original     		PDF 2002/95/EC) UNR5225, UNR5226 UNR5225 UNR5225: UNR5226: UNR5225 UNR5226

    ic MARKING FZ

    Abstract: UNR5225G UNR5226G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Resistance by Part Number • UNR5225G


    Original     		PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G ic MARKING FZ UNR5225G UNR5226G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the


    Original     		PDF 2002/95/EC) UNR5225, UNR5226 UNR5225

    ic MARKING FZ

    Abstract: UNR5225G UNR5226G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Code SMini3-F2 • Pin Name 1: Base 2: Emitter 3: Collector Th an


    Original     		PDF 2002/95/EC) UNR5225G, UNR5226G ic MARKING FZ UNR5225G UNR5226G

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2)


    Original     		PDF 2002/95/EC) UNR5225/5226/5227

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) UNR5225/5226/5227 UNR5225 UNR5226 UNR5227

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planer transistor 0.425 Unit: mm For muting 0.3+0.1 –0.0 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 2 (0.65) (0.65) 1.3±0.1 (R2)   6.8 kΩ 2.0±0.2 10° 0 to 0.1 (R1) 10 kΩ


    Original     		PDF UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 SJH00043AED

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    ic MARKING FZ

    Abstract: UNR5225 UNR5226 UNR5227
    Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type 0.425 Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 2 0.2±0.1 1 ■ Resistance by Part Number Marking symbol


    Original     		PDF UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 ic MARKING FZ UNR5225 UNR5226 UNR5227

    ic MARKING FZ

    Abstract: UNR5225 UNR5226 UNR5227
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) UNR5225/5226/5227 SC-70 ic MARKING FZ UNR5225 UNR5226 UNR5227

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan     		PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202