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    UNR5225 Search Results

    UNR5225 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR5225 Panasonic NPN Transistor with built-in Resistor Original PDF
    UNR5225 Panasonic Silicon NPN Epitaxial Planar Transistor Original PDF

    UNR5225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2)


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    PDF 2002/95/EC) UNR5225/5226/5227

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package • Code SMini3-G1 • Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te on na


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    PDF 2002/95/EC) UNR5225, UNR5226 UNR5225

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the


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    PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G UNR5226G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/


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    PDF 2002/95/EC) UNR5225/5226/5227 UNR5225 UNR5226 UNR5227

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2


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    PDF 2002/95/EC) UNR5225/5226/5227 UNR5225 UNR5226 UNR5227

    UNR5225

    Abstract: UNR5226
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For muting • Package ■ Features ■ Resistance by Part Number (R1)


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    PDF 2002/95/EC) UNR5225, UNR5226 UNR5225 UNR5225: UNR5226: UNR5225 UNR5226

    ic MARKING FZ

    Abstract: UNR5225G UNR5226G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Resistance by Part Number • UNR5225G


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    PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G ic MARKING FZ UNR5225G UNR5226G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the


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    PDF 2002/95/EC) UNR5225, UNR5226 UNR5225

    ic MARKING FZ

    Abstract: UNR5225
    Text: Transistors with built-in Resistor UNR5225 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.


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    PDF UNR5225 ic MARKING FZ UNR5225

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planer transistor 0.425 Unit: mm For muting 0.3+0.1 –0.0 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 2 (0.65) (0.65) 1.3±0.1 (R2)   6.8 kΩ 2.0±0.2 10° 0 to 0.1 (R1) 10 kΩ


    Original
    PDF UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 SJH00043AED

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR5225 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.


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    PDF UNR5225

    ic MARKING FZ

    Abstract: UNR5225G UNR5226G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Code SMini3-F2 • Pin Name 1: Base 2: Emitter 3: Collector Th an


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    PDF 2002/95/EC) UNR5225G, UNR5226G ic MARKING FZ UNR5225G UNR5226G

    ic MARKING FZ

    Abstract: UNR5225 UNR5226 UNR5227
    Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type 0.425 Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 2 0.2±0.1 1 ■ Resistance by Part Number Marking symbol


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    PDF UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 ic MARKING FZ UNR5225 UNR5226 UNR5227

    ic MARKING FZ

    Abstract: UNR5225 UNR5226 UNR5227
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 Collector-emitter voltage (Base open)


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    PDF 2002/95/EC) UNR5225/5226/5227 SC-70 ic MARKING FZ UNR5225 UNR5226 UNR5227

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan
    PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202