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    Panasonic Electronic Components UNR31A600L

    TRANS PREBIAS PNP 50V SSSMINI3
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    Panasonic Electronic Components UNR31A6G0L

    TRANS PREBIAS PNP 50V SSSMINI3
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    UNR31A6 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR31A6 Panasonic Composite Device - Transistors with built-in Resistor Original PDF
    UNR31A600L Panasonic Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 100MW SSSMINI3 Original PDF
    UNR31A6G0L Panasonic Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 100MW SSSMINI3 Original PDF

    UNR31A6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment


    Original     		PDF 2002/95/EC) UNR31A6G

    NP041A6

    Abstract: UNR31A6
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 1.00±0.05  UNR31A6 x 2 0.10 1.00±0.04 3 (0.35) (0.35) 0.10 1


    Original     		PDF 2002/95/EC) NP041A6 UNR31A6 NP041A6 UNR31A6

    NP041A6

    Abstract: UNR31A6
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 0 to 0.02 2 3 (0.35) (0.35) 1.00±0.05  UNR31A6 x 2 Display at No.1 lead


    Original     		PDF 2002/95/EC) NP041A6 UNR31A6 NP041A6 UNR31A6

    NP041A6

    Abstract: UNR31A6
    Text: Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.35 (0.35) 1.00±0.05  UNR31A6 x 2 Display at No.1 lead +0.03 (0.10) 0.37 -0.02  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF NP041A6 UNR31A6 NP041A6 UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05  UNR31A6 x 2 Display at No.1 lead +0.03


    Original     		PDF 2002/95/EC) NP041A6 UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		PDF 2002/95/EC) UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 1  Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05  UNR31A6 x 2


    Original     		PDF 2002/95/EC) NP041A6 UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For digital circuits 1 0.23+0.05 –0.02 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.15 min.


    Original     		PDF UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		PDF 2002/95/EC) UNR31A6

    UNR31A6G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) UNR31A6G UNR31A6G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		PDF 2002/95/EC) UNR31A6

    UNR31A6G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: CN • Pin Name 1: Base 2: Emitter


    Original     		PDF 2002/95/EC) UNR31A6G UNR31A6G

    UNR31A6

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar transistor Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For digital circuits 1 0.23+0.05 –0.02 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 0.15 min.


    Original     		PDF UNR31A6 UNR31A6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05  UNR31A6 x 2 Display at No.1 lead +0.03


    Original     		PDF 2002/95/EC) NP041A6 UNR31A6

    UNR31A6

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) 0.80±0.05


    Original     		PDF 2002/95/EC) UNR31A6 UNR31A6

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 1.00±0.05 Parameter Symbol Collector-base voltage


    Original     		PDF 2002/95/EC) NP043A6

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    NP043A6

    Abstract: UNR31A6 UNR32A6
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 (0.35) (0.35) • Basic Part Number


    Original     		PDF 2002/95/EC) NP043A6 NP043A6 UNR31A6 UNR32A6

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    NP043A6

    Abstract: UNR31A6 UNR32A6
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 1.00±0.05 Parameter Symbol Rating


    Original     		PDF 2002/95/EC) NP043A6 NP043A6 UNR31A6 UNR32A6

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    UNR31AB

    Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
    Text: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit


    OCR Scan     		PDF UNR31AÃ UNR32A UNR31AB matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT