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    UNR1111 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UNR1111 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF

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    UN1111

    Abstract: UNR1111 XN01111 XN1111
    Text: Composite Transistors XN01111 XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1111(UN1111) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01111 XN1111) UNR1111 UN1111) UN1111 XN01111 XN1111

    UN1111

    Abstract: UNR1111 XP04111 XP4111
    Text: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04111 XP4111) UNR1111 UN1111) UN1111 XP04111 XP4111

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP03311
    Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1211(UN1211)+UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		PDF XP03311 UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP03311

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP04311 XP4311
    Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) + UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		PDF XP04311 XP4311) UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP04311 XP4311

    UN1111

    Abstract: UNR1111 XP01111 XP1111
    Text: Composite Transistors XP01111 XP1111 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1111(UN1111) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01111 XP1111) UNR1111 UN1111) UN1111 XP01111 XP1111

    1117 S Transistor

    Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115

    UNR1111

    Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112

    1117 S Transistor

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    marking 6Z

    Abstract: UN1111 UNR1111 XP06111 XP6111
    Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1


    Original     		PDF XP06111 XP6111) UNR1111 UN1111) marking 6Z UN1111 XP06111 XP6111

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR111x UN111x UNR1110 UNR1111 UNR1112

    UN1111

    Abstract: UNR1111 XP04111 XP4111
    Text: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP04111 XP4111) UNR1111 UN1111) UN1111 XP04111 XP4111

    marking 6Z

    Abstract: UN1111 UNR1111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25


    Original     		PDF XN06111 XN6111) UNR1111 UN1111) marking 6Z UN1111 XN06111 XN6111

    UNR1110

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    UN1111

    Abstract: UNR1111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06111 XN6111) UN1111 UNR1111 XN06111 XN6111

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    UN1211

    Abstract: UNR1111 UNR1211 XP04311 XP4311 UN1111
    Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP04311 XP4311) UNR1211 UN1211) UNR1111 UN1111) UN1211 XP04311 XP4311 UN1111

    UN1111

    Abstract: UNR1111 XN04111 XN4111
    Text: Composite Transistors XN04111 XN4111 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6


    Original     		PDF XN04111 XN4111) UNR1111 UN1111) UN1111 XN04111 XN4111

    UN1111

    Abstract: UNR1111 XP01111 XP1111
    Text: Composite Transistors XP01111 XP1111 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP01111 XP1111) UNR1111 UN1111) 50nductor UN1111 XP01111 XP1111

    UNR1211

    Abstract: XN04311 XN4311 UN1111 UN1211 UNR1111 XN04311XN4311
    Text: Composite Transistors XN04311 XN4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN04311 XN4311) UNR1211 UN1211) UNR1111 UN1111) XN04311 XN4311 UN1111 UN1211 XN04311XN4311

    common collector PNP

    Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118

    UN1111

    Abstract: UNR1111 XN01111 XN1111
    Text: Composite Transistors XN01111 XN1111 Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01111 XN1111) UNR1111 UN1111) UN1111 XN01111 XN1111

    UNR1211

    Abstract: XN0A311 XN1A311 UN1111 UN1211 UNR1111
    Text: Composite Transistors XN0A311 XN1A311 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number of Element 1.1+0.2 –0.1


    Original     		PDF XN0A311 XN1A311) UNR1211 UN1211) UNR1111 UN1111) UNR1211 XN0A311 XN1A311 UN1111 UN1211 UNR1111

    XN4111

    Abstract: UN1111 UNR1111 XN04111
    Text: Composite Transistors XN04111 XN4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0.4±0.2


    Original     		PDF XN04111 XN4111) XN4111 UN1111 UNR1111 XN04111