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    UNITED DETECTOR SILICON Search Results

    UNITED DETECTOR SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    UNITED DETECTOR SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E02

    United Detector silicon photodiode

    Abstract: near IR photodiodes centronic photodiodes photodetector centronic package 1
    Text: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR NEW www.centronic.us Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light


    Original     		PDF EO/010 FM25100 EMS68441 United Detector silicon photodiode near IR photodiodes centronic photodiodes photodetector centronic package 1

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device


    Original     		PDF 500um 500um 350nm 1100nm 105/125MMF

    C2719

    Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E04 C2719 K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02

    Hamamatsu PbS

    Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E05 Hamamatsu PbS K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E05

    Hamamatsu PbS

    Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E06 Hamamatsu PbS United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E06

    C1103-04

    Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E03 C1103-04 flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW

    4n33 schematic

    Abstract: 4N33 Data sheet 4N33 4N32 4N29 APPLICATION NOTE 4N32 test circuit 4N29 4N30 4N31
    Text: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current


    Original     		PDF 200038B 4n33 schematic 4N33 Data sheet 4N33 4N32 4N29 APPLICATION NOTE 4N32 test circuit 4N29 4N30 4N31

    QFN16L

    Abstract: STB7720 C3226 stb772
    Text: STB7720L 2.4-2.5 GHz Silicon Linear Power Amplifier IC PRELIMINARY DATA FEATURES SUMMARY • EXCELLENT LINEARITY EVM 2% @ 19dBm WITH 802.11g OFDM 54Mb/s MODULATION Figure 1. Package • VERY LOW QUIESCENT CURRENT (60mA) • INTEGRATED LINEAR ANALOG CONTROL FOR


    Original     		PDF STB7720L 19dBm 54Mb/s QFN16L STB7720L, 11b/g 19dBm QFN16L STB7720 C3226 stb772

    optocouplers 501

    Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


    Original     		PDF CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 optocouplers 501 H11BX CNX48U H11B1 H11B255 optocouplers 501 IC H11B2 H11B3

    4N33 APPLICATION NOTE

    Abstract: Fairchild 4N32 4N33 4N32 4N29 4N30 4N31
    Text: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current


    Original     		PDF 200038B 4N33 APPLICATION NOTE Fairchild 4N32 4N33 4N32 4N29 4N30 4N31

    Untitled

    Abstract: No abstract text available
    Text: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR www.centronic.co.uk Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light


    Original     		PDF EO/010

    Quality Technologies optocouplers

    Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		PDF MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 SS16/1, HP19-3EY 00035A Quality Technologies optocouplers B613 IC 1296 QT OPTOELECTRONICS PONT DIODE 0884 qt

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum


    Original     		PDF 1100nm, ld/si-pin-pd-500um-high-speed

    4n33 schematic

    Abstract: QT OPTOELECTRONICS 4N29 APPLICATION NOTE 4N29 4N33 Data sheet 4N30 4N31 4N32 4N33
    Text: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current


    Original     		PDF

    a140mW

    Abstract: H11B815 4pin diode
    Text: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA


    Original     		PDF H11B815 H11B815 E90700) 00029A a140mW 4pin diode

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
    Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS


    OCR Scan     		PDF T-41-53 T-41-53 850nm 850nm/1kHz 0V/50Q PIN-10D 050x0 P/N-125DPL PIN-220D, PIN-220DP United Detector Technology Photodiodes United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp

    UDT-PIN-10AP

    Abstract: UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector PIN-10AP United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF
    Text: 48C 00681 9310987 UNITED DETECTOR UNITED DETECTOR UNITED D E T E C T O R DE 4fl T-41-53 r DETECTOR/FI LTER COMBINATIONS DDDDtfll 1 •HI! T EC H N O LO G Y D A TA S H E E T 9F006 DETECTOR/FILTER COMBINATIONS PIN - 10AP PIN - lO D FP — PIN - 10RP -C.I.E.-fHO'TOPIC H U M AN ÊYEJ


    OCR Scan     		PDF T-41-53 9F006 10DFP UDT-PIN-10AP -10RP PIN-10RP PIN-10DFP PIN-10DFP, PIN-10AP PIN-10RP UDT-PIN-10AP UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon
    Text: 84D 00964 03 10987 UNITED DETECTOR UNITE» DETECTOR AM D T-41-55 »F§'J31D‘lfi7 0D0Dcib4 5 United Detector Technology A Division of Technology’, Inc. f ILC 12525 Chadron Avenue • Hawthorne, California 90250 • 213 978-0516 Telex Number 18-2458 Fax Number (213) 644-1727


    OCR Scan     		PDF T-41-55 A2V-16 United Detector Technology Photodiodes United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon

    301B-AC

    Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
    Text: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\


    OCR Scan     		PDF 930nm FIL-20C FIL-100C 100x0 301B-AC United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D fil 3c

    L40205

    Abstract: No abstract text available
    Text: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other


    OCR Scan     		PDF L40053 L40052 L40064 L40063 L40261 L40260 L40202 L40204 L40201 L40203 L40205

    tunnel junction diode

    Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
    Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.


    OCR Scan     		PDF sufficient800 tunnel junction diode tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel