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    UNCONDITIONALLY STABLE TRANSISTOR HIGH GAIN 2.4 GHZ Search Results

    UNCONDITIONALLY STABLE TRANSISTOR HIGH GAIN 2.4 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    UNCONDITIONALLY STABLE TRANSISTOR HIGH GAIN 2.4 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GRM01

    Abstract: SKY65053-377LF s1416
    Text: PRELIMINARY DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		PDF SKY65053-377LF: J-STD-020) SKY65053-377LF SKY65053-37ucts 01089A GRM01 s1416

    SKY65052-372LF

    Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01
    Text: PRELIMINARY DATA SHEET SKY65052-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65052-372LF Block Diagram


    Original     		PDF SKY65052-372LF: SKY65052-372LF 01088A S1509 VT47 GRM015 S1408 S1511 S1417 GRM01

    HP-VFQFP-N20

    Abstract: T7026 T7026-PGQ T7026-PGS
    Text: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF HP-VFQFP-N20 T7026 HP-VFQFP-N20 T7026-PGQ T7026-PGS

    4563B

    Abstract: T7026 QFN20 T7026-PGQ T7026-PGS
    Text: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF QFN20 T7026 T7026 4563B QFN20 T7026-PGQ T7026-PGS

    WJ 58 transistor

    Abstract: AP603
    Text: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 64DPCH 84MHz AP603, AP603 1-800-WJ1-4401 WJ 58 transistor

    2052-1215-00

    Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
    Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low


    Original     		PDF AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093

    GRM01

    Abstract: No abstract text available
    Text: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		PDF SKY65053-377LF: J-STD-020) SKY65053-377LF 201089B GRM01

    HBPF-0420

    Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04

    w06 transistor

    Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface


    Original     		PDF HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 w06 transistor Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 W04 sot 23 W02 sot 23 W02 transistor

    S1555

    Abstract: S1509 GRM01 S1416 VT47 GRM015 S1512 SKY65053-377LF-EVB
    Text: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		PDF SKY65053-377LF: SKY65053-377LF 201089D S1555 S1509 GRM01 S1416 VT47 GRM015 S1512 SKY65053-377LF-EVB

    S1509

    Abstract: GRM015 S1416 S1512 VT47 GRM01
    Text: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		PDF SKY65053-377LF: SKY65053-377LF 201089C S1509 GRM015 S1416 S1512 VT47 GRM01

    BFP640

    Abstract: SiGe PNP transistor Miteq RF LNA 3.1 to 10.6 GHz Application Note 21 k 151 transistor FSEB30 unconditionally stable transistor high gain 2.4 ghz SiGe PNP
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 1 L o w N o i s e A m p l i fi e r L N A f o r 2 . 3 - 2 . 5 G H z A p pl i c a t i o n s U s i n g t h e S i G e B F P 6 4 0 T r a ns i s t o r R F & P r o t e c ti o n D e v i c e s


    Original     		PDF BFP640 SiGe PNP transistor Miteq RF LNA 3.1 to 10.6 GHz Application Note 21 k 151 transistor FSEB30 unconditionally stable transistor high gain 2.4 ghz SiGe PNP

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


    Original     		PDF BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier

    T7026

    Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS
    Text: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF QFN20 T7026 T7026 4563C QFN20 T7026-PGP T7026-PGQ T7026-PGS

    T7026

    Abstract: QFN20 T7026-PGP T7026-PGPW T7026-PGQ T7026-PGQW 33 GP ATMEL QFN20
    Text: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF QFN20 T7026 T702make 4563E QFN20 T7026-PGP T7026-PGPW T7026-PGQ T7026-PGQW 33 GP ATMEL QFN20

    DIODE N20

    Abstract: PU-118 ICT7024 T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS T7024 4533B
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF PSSO20 HP-VFQFP-N20 T7024 T7024 4533B DIODE N20 PU-118 ICT7024 T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS

    ATMEL 910

    Abstract: No abstract text available
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF QFN20 T7024 4533Iâ ATMEL 910

    ATMEL 910

    Abstract: QFN20 T7024 T7024-PGPM T7024-PGQM Demoboard-T7024-PGM ATMEL QFN20
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF QFN20 T7024 4533I ATMEL 910 T7024-PGPM T7024-PGQM Demoboard-T7024-PGM ATMEL QFN20

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    QFN20

    Abstract: T7024 T7024-PGP T7024-TRQ T7024-TRS PU-118
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF PSSO20 QFN20 T7024 T7024 4533D T7024-PGP T7024-TRQ T7024-TRS PU-118

    ICT7024

    Abstract: No abstract text available
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


    Original     		PDF PSSO20 QFN20 T7024 T7024 4533C ICT7024

    285-1

    Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
    Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance


    Original     		PDF INA-12063 OT-363 SC-70) INA-12063 285-1 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063-BLK

    6252 IC circuit diagram

    Abstract: INA-12 RHO marking waveguide selective switch INA-12063 INA-12063-BLK INA-12063-TR1 amp 4546 5024 transistor amp 4546 jc
    Text: 1 H 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance


    Original     		PDF INA-12063 OT-363 SC-70) INA-12063 5965-5365E 6252 IC circuit diagram INA-12 RHO marking waveguide selective switch INA-12063-BLK INA-12063-TR1 amp 4546 5024 transistor amp 4546 jc

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PRELIMINARY M ic r o W a v e M PS-253011 LINEAR AMPLIFIER MODULE Te c h n o lo g y FEATURES APPLICATIONS • • • • • • • • • • • • • Covers International ISM Band Frequency Range of 2.4 GHz to 2.7 GHz Single Positive Supply Operation


    OCR Scan     		PDF PS-253011 MPS-253011 R0-3003 MPS-253011-85 MPS-253011-86 bl2410Q